Folded-bilayer Graphene Achieves 20 meV Spin Accumulation and over Tenfold Asymmetry for Efficient Spin Rectification

Description

Graphene’s potential as a platform for future spintronic devices, including non-volatile memory and logic, hinges on creating components that not only transport spin efficiently but also actively manipulate it. Md. Anamul Hoque, Zoltán Kovács-Krausz, and Bing Zhao, alongside colleagues from Chalmers University of Technology, Budapest University of Technology and Economics, and the University of Manchester, now demonstrate a significant step towards this goal. The team fabricated a novel device using folded-bilayer graphene and reports exceptionally large spin signals, reaching several millivolts, alongside a pronounced spin-rectification effect. This achievement, which generates a substantial spin accumulation and a spin-diode effect exceeding ten-fold asymmetry, arises from the strong interplay between accumulated spin and applied electric fields, paving the way for ultrathin, active spintronic devices based on two-dimensional materials.