Data supporting publication entitled "Disentangling the impact of point defect density and carrier localisation enhanced Auger recombination on efficiency droop in (In,Ga)N/GaN quantum wells"

  • Rachel Barrett (Creator)
  • Joshua Mcmahon (Creator)
  • Ruben Lazo (Creator)
  • Juan Arturo Alanis (Creator)
  • Patrick Parkinson (Creator)
  • Stefan Schulz (Creator)
  • Menno J. Kappers (Creator)
  • Rachel A. Oliver (Creator)
  • David Binks (Creator)



Phototluminescence intensity vs carrier density for three samples grown at different temperatures; Phototluminescence transients for these samples; Calculated radiative and Auger recombination coefficients.
Date made available12 May 2023
PublisherUniversity of Manchester Figshare
Date of data production30 Sept 2019 -


  • InGaN
  • efficiency droop
  • Auger recombination dynamics
  • point defect behavior
  • LED (light emitting diode)
  • point defect behaviour

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