Dielectric response of wurtzite gallium nitride in the terahertz frequency range

Abstract
The research data is for the journal article entitled "Dielectric response of wurtzite gallium nitride in the terahertz frequency range". It consists of three figures: Figure 1: (a) Terahertz waveforms transmitted through the m-plane GaN single crystal using both a PCA-GaP and a ZnTe-ZnTe emitter-detector spectrometer configuration. The waveforms were recorded with the electric field of the terahertz radiation polarized both perpendicular and parallel to the c-axis of the crystal. (b) The corresponding power spectra. The data for each spectrometer configuration are offset for clarity. Figure 2: (a) Refractive index and (b) absorption coefficient values determined from transmission with the terahertz electric field polarized perpendicular and parallel to the c-axis of the m-plane GaN single crystal. The data are fitted using a damped harmonic oscillator model of the phonon contribution to the dielectric dispersion. Inset in (b) shows the real part of the relative dielectric constants. Figure 3: Raman back-scattering spectra of the m-plane GaN single crystal using edge geometry with the electric field (E) polarized parallel to the a- and c-axis. Licence type: Creative Commons Attribution (CC-BY) licence