Skip to main navigation Skip to search Skip to main content

Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

  • George Christian (Contributor)

    Dataset

    Description

    Conduction and valence band profiles calculated using Nextnano3 for InGaN/GaN single quantum well structures with Si-doped InGaN underlayers and different GaN cap layer thicknesses.

    Photoluminescence spectra obtained at 10 K for those quantum well structures.
    Date made available28 Nov 2018
    PublisherMendeley Data

    Access Dataset

    Cite this