Details
Description
Atomic layer deposition (ALD) is a thin film deposition technique that enables precise and controlled deposition of atomic or molecular layers onto a substrate surface. Precursor materials are pulsed in an alternating sequence, with each adsorbing to the surface and reacting to form the desired material one layer at a time. This allows uniform and conformal growth of high-quality films with precise control over the deposition rate and thickness.
An optional plasma generator is also included in this tool to increase the reactivity of precursors and enhance the surface reactions, which can lead to improved film quality or growth rate while reducing the need for high substrate temperature during deposition.
Deposition recipes currently supported on this tool include Al2O3, HfO2 and SiO2.
An optional plasma generator is also included in this tool to increase the reactivity of precursors and enhance the surface reactions, which can lead to improved film quality or growth rate while reducing the need for high substrate temperature during deposition.
Deposition recipes currently supported on this tool include Al2O3, HfO2 and SiO2.
Details
Name | Picosun ALD R200 Advanced Atomic Layer Depostion (ALD) System |
---|---|
Manufacturers | Oxford Instruments plc |
Fingerprint
Explore the research areas in which this equipment has been used. These labels are generated based on the related outputs. Together they form a unique fingerprint.