Research output per year
Research output per year
Personal profile
Education/Academic qualification
Master of Engineering, A New Approximation of Fermi-Dirac Integrals of Order 1/2 by Prony’s Method and Its Applications in Semiconductor Devices, University of Waterloo
1 Jan 2015 → 21 Apr 2017
Award Date: 21 Apr 2017
Bachelor of Engineering, Umm Al-Qura University
3 Sep 2007 → 28 Jan 2012
Award Date: 28 Jan 2012
Areas of expertise
- TK Electrical engineering. Electronics Nuclear engineering
Fingerprint
Dive into the research topics where Ahmed Alqurashi is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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InGaAs/AlAs Asymmetric Spacers RTDs for THz Imaging Applications
Alqurashi, A. & Missous, M., 30 Mar 2021, Semiconductor and Integrated OptoElectronics (SIOE) Conference.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Physical Modeling of Asymmetric Spacers Resonant Tunneling Diodes (RTDs)
Alqurashi, A. & Missous, M., 2021, 2021 IEEE Latin America Electron Devices Conference (LAEDC).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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A new approximation of Fermi-Dirac integrals of order 1/2 for degenerate semiconductor devices
Alqurashi, A. & Selvakumar, C. R., 1 Jun 2018, In: Superlattices and microstructures. 118, p. 308-318 11 p.Research output: Contribution to journal › Article › peer-review
Thesis
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ADVANCED TUNNELING DIODES FOR HIGH-FREQUENCY APPLICATIONS AND WIRELESS COMMUNICATION SYSTEMS
Author: Alqurashi, A., 1 Aug 2023Supervisor: Missous, M. (Supervisor) & Majewski, L. (Supervisor)
Student thesis: Phd
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