Personal profile

Overview

I graduated with an MPhys in Physics from the University of Liverpool in 2022, specialising in defect analysis of thin film CdTe solar cells. My interest in semiconductor devices led me to join the CDT in Compound Semiconductor Manufacturing, through which I gained an MSc in Compound Semiconductor Physics from Cardiff University in 2023. During my time in Cardiff, my research focus continued to look into defects in compound semiconductors through electrical and optical characterisation techniques, as I analysed GaN-based materials. My current PhD project looks to study point defects in wide bandgap semiconductors and assess the impact they have on device performance, through the application of Laplace (high resolution) Deep Level Transient Spectroscopy. 

My supervisor is Prof Matthew Halsall and I work with specialists in this topic area including Prof Anthony Peaker, Dr Vladimir Markevich and Dr Ian Hawkins.

Expertise related to UN Sustainable Development Goals

In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):

  • SDG 7 - Affordable and Clean Energy
  • SDG 11 - Sustainable Cities and Communities
  • SDG 13 - Climate Action

Education/Academic qualification

Master in Science, Compound Semiconductor Physics, Cardiff University

Sept 2022Sept 2023

Award Date: 2 Nov 2023

Master of Physics, Physics, University of Liverpool

Sept 2018Jul 2022

Award Date: 22 Jul 2022

Areas of expertise

  • QC Physics
  • Semiconductors
  • DLTS
  • Defects
  • Solid state
  • Characterisation

Research Beacons, Institutes and Platforms

  • Photon Science Institute

Keywords

  • Deep level transient spectroscopy
  • Defects in semiconductors
  • III-V semiconductors
  • Diodes
  • Laplace Deep Level Transient Spectroscopy
  • Non-radiatative recombination processes in semiconductors (LEDs, solar cells)
  • light emitting diodes
  • GaN related materials
  • Wide bandgap semiconductors

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