Curran, N.,
Joy, K.,
Burgess, R.,
Gilmour, J.,
Clay, P.,
Pernet-Fisher, J.,
Mcdonald, F.,
Martin, D.,
Crowther, S.,
Ruzie-Hamilton, L.,
Nottingham, M. &
Turner, G.,
Dec 2015,
Moon 2020-2030: A new method for characterising inversion transients in metal-oxide-semiconductor devices is reported. The technique uses Isothermal Deep Level Transient Spectroscopy to separate generation currents from various sources. The combination of activation graphs with Zerbst plots gives a complete characterisation of devices with dimensions down to sub-micron levels. © 1988 Les Editions de Physique..Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review