Personal profile

Overview

My Master’s research, conducted from 2017 to 2020 at Sun Yat-sen University, concentrated on the simulation and experimental study of GaN/AlGaN-based heterojunction photodetector/phototransistor. Using the Silvaco TCAD platform, I modeled GaN device structures and characteristics to complement experimental research. I also gained hands-on experience in microfabrication processes in a cleanroom, performing tasks such as photolithography, ICP dry etching, wet etching, electron beam evaporation, magnetron sputtering, and rapid thermal annealing (RTA). Furthermore, I utilized a variety of characterization techniques to study GaN photodetector properties, including I-V and C-V measurements, photoresponse, weak light response, response speed, PL, SEM, and SIMS analyses.

During my PhD research at the Department of Electrical and Electronic Engineering (EEE), University of Manchester (UoM), from April 2022 to the present. My work has focused on the characterization of deep-level defects in GaN/AlGaN-based LEDs materials. This involves the use of Deep Level Transient Spectroscopy (DLTS) and Photoluminescence Spectroscopy (PL) to identify critical defect properties. Additionally, I have employed high-resolution Laplace DLTS (L-DLTS) to resolve closely spaced defect energy levels, providing deeper insights into the electronic properties and behavior of GaN-based materials.

My supervisors are Prof Matthew Halsall and Prof David Binks, and I work with experts specializing in this research area including Prof Anthony Peaker, Dr Vladimir Markevich, and Dr Ian Hawkins.

Expertise related to UN Sustainable Development Goals

In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):

  • SDG 7 - Affordable and Clean Energy
  • SDG 9 - Industry, Innovation, and Infrastructure

Education/Academic qualification

Master of Engineering, Study the GaN/AlGaN heterojunction phototransistor/photodetector., Sun Yat-sen University

1 Sept 20171 Jul 2020

Award Date: 1 Jul 2020

Areas of expertise

  • QC Physics
  • optical spectroscopy
  • Photoluminescence
  • DLTS
  • deep level defects
  • III-V Semiconductors
  • GaN
  • AlGaN
  • Wide bandgap materials
  • Characterisation

Research Beacons, Institutes and Platforms

  • Photon Science Institute

Keywords

  • LEDs
  • Heterojunction
  • Phototransistor
  • Photodetector

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