Personal profile


Mohamed Missous, FREng, is Professor of Semiconductor Materials and Devices at the University of Manchester. His areas of expertise include Molecular Beam Epitaxy of high speed InP-based transistors, low temperature THz materials and sub-millimetre wave Resonant Tunnelling Devices. His team has a long history of studying the manufacturability of quantum mechanical tunnel based devices and technology transfer that have led to successful commercialisation by e2V ltd of 77GHz Gunn diodes for autonomous Cruise Control (ACC) systems in BMW and Audi cars and GaAs photoconductive switches for Teraview ltd spectroscopy systems as well as LT-InGaAs for TeTechs Inc (Canada) 1.55µm compact THz systems. He leads an STFC, Innovate UK and EPSRC (£2M) programme in 2DEG Quantum Well Hall Sensors for the RCNDE consortium. His involvement in the above research topics has led to the publication of more than 220 papers in the open, international literature and over £10M funding from EPSRC, STFC (Square kilometre Array programme) and InnovateUK in the last 10 years. Together with Professor M. J. Kelly he was awarded the 2015 Royal Society Brian Mercer award for manufacturability of tunnel devices. He is the founder and Technical director of two successful companies (AHS ltd and ICS ltd) that supply the markets above. He is on the advisory board of TechUK which has more than 850 member companies spanning the entire supply chain in electronics. He has held and holds various managerial post at the University including Head of group, Director of research and Chair of School Board. He is regularly invited to give talks at international venues on mmwave and THz technologies (IEEE sensors, NanoTR2013, InnovateUK etc...).He wrote a chapter for the “Handbook of Terahertz Technology for Imaging, sensing and Communications” published by Woodhead in 2013.

In October 2016 and together with colleagues at Cardiff, UCL and Sheffield, were awarded a 7 years, £10M EPSRC funding from the Engineering and Physical Sciences Research Council (EPSRC) to bring UK academics and industry together in a hub of CS expertise to form the EPSRC Manufacturing Hub in Future Compound Semiconductors  Silicon once supported the information society, but the technology is reaching fundamental limits in the 21st Century. Applying CS knowhow to silicon manufacturing techniques will form the central focus for the new venture. At Manchester the Hub will provide unique capabilities in integrated CS electronics spanning the highly advantageous electrical, optical and magnetic properties of CS devices enabling research into large-scale CS growth and device fabrication.” The Research  concentrates on manufacturability on large scale (up to 8” equivalent GaAs and InP wafer size) of novel, highly integrated 2D magnetic Quantum Well Hall Effect sensors for Non-Destructive Testing and Ultra high frequency RF circuits for emerging applications such as 5G wireless mobile communications, as well as ultra-high speed optical devices for upcoming 10G fibre to the home. £2M has been earmarked for this research as part of the £10M envelope. 

Research interests

My research activities are centred on the growth of complex multi-layer semiconductor films by the technique of Molecular Beam Epitaxy (MBE). Over the years I have concentrated, with considerable success, on establishing practical approaches and techniques required to meet stringent doping and thickness control, to sub monolayer accuracy, for a variety of advanced quantum devices, from mid infrared quantum well infrared photodetectors to Terahertz materials for 1 um imaging. The main thrust of the Group's MBE Semiconductor Nanotechnology Programmes deals with the Materials, Physics, and Device aspects of advanced semiconductor for use in ultra fast phenomena for a range of applications, which includes advanced devices for Radio Astronomy applications to biological and life science interactions. 

  • Ultra high speed InAlAs-InGaAs HBT for mixed mode ICs.
  • Low noise InAlAs-InGaAs pHEMT 
  • Novel Mid IR technologies using highly strained InGaAs-InAlAs materials for short wavelength Quantum cascade Lasers (QCL), Quantum Well Infrared Photodetectors (QWIP) and normal incidence Quantum Dot Infrared Photodetectors (QDIP). Main applications in night vision, biological systems monitoring.
  • Highly strained InP-based Pseudomorphic low noise, high linearity Amplifier for Radio Astronomy Applications.
  • TeraHertz Materials: Emitters and detectors in the1 to 4 THz band for applications in biological systems.
  • Quantum Dots for fast carrier relaxation: TeraHertz emitters and detectors for 1.3 and 1.55 µm applications.
  • Quantum Dots Lasers for 1.3 µm fibre optics applications.


Metal-Quantum Dot systems: interactions, interfaces and device applications.

My group

Memberships of committees and professional bodies





Expertise related to UN Sustainable Development Goals

In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):

  • SDG 7 - Affordable and Clean Energy
  • SDG 12 - Responsible Consumption and Production

Research Beacons, Institutes and Platforms

  • Digital Futures
  • Christabel Pankhurst Institute


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Collaborations and top research areas from the last five years

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