Physics
Strain
99%
Piezoelectricity
96%
Semiconductor
94%
Simulation
51%
Model
50%
Coefficients
42%
Wurtzite
27%
Growth
25%
Nanowires
19%
Performance
18%
Value
18%
Exciton
17%
Island
17%
Calculation
16%
ZnO
15%
Energy Gaps (Solid State)
15%
Elasticity
13%
Thermodynamic Properties
13%
Energy Levels
12%
Wetting
12%
Quantum Wells
12%
Graphene
12%
Crystals
12%
Light Emitting Diode
12%
Atoms
12%
Quaternary Alloy
11%
Pressure
11%
Insulators
11%
Strength of Materials
11%
Cores
11%
Electric Fields
11%
Alloy
11%
Impact
10%
Density Functional Theory
9%
Environment
9%
Anisotropy
9%
Molecular Dynamics
9%
Utilization
8%
Optical Properties
8%
Scanning Tunneling Microscopy
8%
Optimization
8%
Geometry
7%
Kinetics
7%
Splitting
7%
Statics
7%
Ripples
7%
Emission
7%
Openings
7%
Electronic Structure
6%
Deformation
6%
Material Science
Semiconductor Material
100%
Piezoelectricity
99%
Strain
81%
Gallium Arsenide
54%
Quantum Dot
38%
Graphene
30%
Devices
26%
ZnO
21%
Nanowires
21%
Wetting
20%
Material
19%
Density
18%
Diode
17%
Surface
17%
Nanocrystalline Material
16%
Thermodynamic Property
13%
III-V Semiconductor
13%
Mechanical Property
12%
Magnesium Oxide
11%
Elastic Constant
11%
Crystal
9%
Metal
8%
Quantum Well
8%
Alloy
8%
Photoluminescence
7%
Light-Emitting Diode
7%
Structural Relaxation
6%
Nitride Compound
6%
Gas
5%
Indium Gallium Arsenide
5%
Nitride Semiconductor
5%
Engineering
Semiconductor
36%
Piezoelectric
30%
Properties
27%
Piezoelectric Effect
20%
Quantum Dot
20%
Strain
19%
Nanowire
17%
Quantum Well
15%
Gallium Arsenide
14%
Piezoelectric Coefficient
13%
Fields
13%
Core-Shell
11%
Light-Emitting Diode
11%
Performance
11%
Shell Nanowires
9%
Indium Gallium Arsenide
9%
Models
8%
Graphene
8%
Simulation
7%
Enhancement
7%
Atomistic Modeling
7%
Semiconductor Nanostructures
7%
Density
7%
Semiconductor Quantum Dot
6%
Tunneling
6%
Electronics
6%
Applications
6%
Molecular Static
5%
Nitride Semiconductor
5%
Energy Level
5%
Nitride
5%
Conduction Band
5%
Sensing Application
5%
Efficiency
5%
Field Enhancement
5%
Strain Profile
5%
Resonant Tunneling
5%
III-V Semiconductor
5%
Internals
5%
Electric Potential
5%