Tim Echtermeyer

Search results

• 2024

  A Graphene‐Mica‐Based Photo‐Thermal Actuator for Small‐Scale Soft Robots

  Gu, M. & Echtermeyer, T. J., 11 Feb 2024, (E-pub ahead of print) In: Small. 2311001.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  File

  • Robot 100%
  • Soft Robot 100%
  • Actuator 100%
  • Morphing Shape 66%
  • Graphene 33%
  75 Downloads (Pure)

• Modular multi-channel high voltage arbitrary waveform generator and imaging setup for dielectric elastomer actuator characterisation

  Vu, M., Lewandowski, M., Guo, X., Weightman, A., Watson, S. & Echtermeyer, T. J., 2 Apr 2024, (E-pub ahead of print) In: HardwareX. e00526.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Dielectric Elastomer Actuator 100%
  • Arbitrary Waveform Generator 100%
  • Elastomer 100%
• 2019

  Visible and infrared photocurrent enhancement in a graphene-silicon Schottky photodetector through surface-states and electric field engineering

  Unsuree, N., Selvi, H., Crabb, M., Alanis, J. A., Parkinson, P. & Echtermeyer, T. J., 16 Aug 2019, (E-pub ahead of print) In: 2 D Materials. 6, 4

  Research output: Contribution to journal › Article › peer-review

  File

  • Graphene 100%
  111 Downloads (Pure)
• 2018

  Graphene-Silicon-On-Insulator (GSOI) Schottky Diode Photodetectors

  Selvi, H., Hill, E., Parkinson, P. & Echtermeyer, T., 28 Oct 2018, In: Nanoscale. 10, 40, p. 18926-18935

  Research output: Contribution to journal › Article › peer-review

  Open Access

  File

  • Graphene 100%
  • Photodetector 100%
  • Silicon on Insulator 100%
  • Schottky Diode 100%
  • Surface Topography 33%
  329 Downloads (Pure)

• Towards Substrate Engineering of Graphene-Silicon Schottky Diode Photodetectors

  Selvi, H., Unsuree, N., Whittaker, E., Halsall, M., Hill, E., Thomas, A., Parkinson, P. & Echtermeyer, T., 30 Jan 2018, In: Nanoscale. 10, 7, p. 3399-3409

  Research output: Contribution to journal › Article › peer-review

  Open Access

  File

  • Graphene 100%
  • Photodetector 100%
  • Schottky Diode 100%
  • Silicon Substrate 40%
  • Oxide Layer 40%
  375 Downloads (Pure)
• 2017

  Nonperturbative harmonic generation in graphene from intense midinfrared pulsed light

  Taucer, M., Hammond, T., Corkum, P., Vampa, G., Couture, C., Thire, N., Schmidt, B., Legare, F., Selvi, H., Unsuree, N., Hamilton, B., Echtermeyer, T. & Denecke, M. A., 2017, In: Physical Review B. 96, 195420.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  File

  • Graphene 100%
  • Laser 50%
  • Monolayers 50%
  • Few-Layer Graphene 50%
  • Harmonic Radiation 25%
  450 Downloads (Pure)
• 2015

  Surface Plasmon Polariton Graphene Photodetectors

  Echtermeyer, T. J., Milana, S., Sassi, U., Eiden, A., Wu, M., Lidorikis, E. & Ferrari, A. C., 14 Dec 2015, In: Nano Letters. 16, 1, p. 8-20

  Research output: Contribution to journal › Article › peer-review
• 2014

  Photo-thermoelectric and photoelectric contributions to light detection in metal-graphene-metal photodetectors

  Echtermeyer, T. J., Nene, P., Novoselov, K. S., Ferrari, A. C., Trushin, M., Gorbachev, R., Eiden, A., Milana, S., Sun, Z., Schliemann, J. & Lidorikis, E., 2 Jun 2014, In: Nano Letters. 14, 7, p. 3733-3742 10 p.

  Research output: Contribution to journal › Article › peer-review
• 2013

  Electron-beam-induced direct etching of graphene

  Thiele, C., Felten, A., Echtermeyer, T. J., Ferrari, A. C., Casiraghi, C., V. Löhneysen, H. & Krupke, R., Nov 2013, In: Carbon. 64, p. 84-91 7 p.

  Research output: Contribution to journal › Article › peer-review

  • Graphene 100%
  • Electron Beam 100%
  • Oxidation Reaction 33%
  • Scanning Electron Microscopy 33%
  • Electron Flux Density 33%
• 2011

  Strong plasmonic enhancement of photovoltage in graphene

  Echtermeyer, T. J., Britnell, L., Jasnos, P. K., Lombardo, A., Gorbachev, R. V., Grigorenko, A. N., Geim, A. K., Ferrari, A. C. & Novoselov, K. S., 2011, In: Nature Communications. 2, 1, 458.

  Research output: Contribution to journal › Article › peer-review

  • Graphene 100%
  • Nanocrystalline Material 33%
  • Transistor 16%
• 2010

  Bistability and oscillatory motion of natural nanomembranes appearing within monolayer graphene on silicon dioxide

  Mashoff, T., Pratzer, M., Geringer, V., Echtermeyer, T. J., Lemme, M. C., Liebmann, M. & Morgenstern, M., 10 Feb 2010, In: Nano Letters. 10, 2, p. 461-465 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Graphene 100%
  • Monolayer 100%
  • Oscillatory Motion 100%
  • Monolayers 100%
  • Two-Dimensional Materials 33%
• 2009

  Complementary metal oxide semiconductor integration of epitaxial Gd2O3

  Lemme, M. C., Gottlob, H., Echtermeyer, T., Schmidt, M., Kurz, H., Endres, R., Schwalke, U., Czernohorkky, M., Tetzlaff, D. & Osten, H., 2009, In: Journal of Vacuum Science and Technology. Part B. Nanotechnology & Microelectronics . 27, 1, p. 258-261 4 p.

  Research output: Contribution to journal › Article › peer-review

• Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO 2

  Geringer, V., Liebmann, M., Echtermeyer, T., Runte, S., Schmidt, M., Rückamp, R., Lemme, M. C. & Morgenstern, M., 2009, In: Physical Review Letters. 102, 7

  Research output: Contribution to journal › Article › peer-review

• Synthesis of graphene on silicon dioxide by a solid carbon source

  Hofrichter, J., Szafranek, B. N., Otto, M., Echtermeyer, T. J., Baus, M., Majerus, A., Geringer, V., Ramsteiner, M. & Kurz, H., 2009, In: Nano Letters. 10, 1, p. 36-42 7 p.

  Research output: Contribution to journal › Article › peer-review
• 2008

  Gentle FUSI NiSi metal gate process for high-<i> k dielectric screening

  Gottlob, H., Lemme, M. C., Schmidt, M., Echtermeyer, T., Mollenhauer, T., Kurz, H., Cherkaoui, K., Hurley, P. & Newcomb, S., 2008, In: Microelectronic Engineering. 85, 10, p. 2019-2021 3 p.

  Research output: Contribution to journal › Article › peer-review

• Leakage current mechanisms in epitaxial Gd2O3 high-k gate dielectrics

  Gottlob, H., Echtermeyer, T., Schmidt, M., Mollenhauer, T., Wahlbrink, T., Lemme, M. C. & Kurz, H., 2008, In: Electrochemical and solid-state letters. 11, 3, p. G12-G14

  Research output: Contribution to journal › Article › peer-review

• Mobility in graphene double gate field effect transistors

  Lemme, M. C., Echtermeyer, T. J., Baus, M., Szafranek, B. N., Bolten, J., Schmidt, M., Wahlbrink, T. & Kurz, H., Apr 2008, In: Solid State Electronics. 52, 4, p. 514-518 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Graphene 100%
  • Field Effect Transistors 100%
  • Carrier Mobility 33%
  • Monolayers 16%
  • Metal-Oxide-Semiconductor Field-Effect Transistor 16%

• Nonvolatile switching in graphene field-effect devices

  Echtermeyer, T. J., Lemme, M. C., Baus, M., Szafranek, B. N., Geim, A. K. & Kurz, H., Aug 2008, In: IEEE Electron Device Letters. 29, 8, p. 952-954 2 p.

  Research output: Contribution to journal › Article › peer-review

  • Graphene 100%
  • Transistor 20%

• Non-volatile switching in graphene field effect devices

  Echtermeyer, T. J., Lemme, M. C., Baus, M., Szafranek, B. N., Geim, A. K. & Kurz, H., 2008, In: IEEE Electron Device Letters. 29, 8, p. 952-954 3 p.

  Research output: Contribution to journal › Article › peer-review
• 2007

  A graphene field-effect device

  Lemme, M. C., Echtermeyer, T. J., Baus, M. & Kurz, H., Apr 2007, In: IEEE Electron Device Letters. 28, 4, p. 282-284 2 p.

  Research output: Contribution to journal › Article › peer-review

  • Graphene 100%
  • Monolayers 20%
  • Carrier Mobility 20%
  • Metal-Oxide-Semiconductor Field-Effect Transistor 20%
  • Field Emission Display 20%

• Graphene field-effect devices

  Echtermeyer, T., Lemme, M. C., Bolten, J., Baus, M., Ramsteiner, M. & Kurz, H., 2007, In: The European Physical Journal-Special Topics. 148, 1, p. 19-26 8 p.

  Research output: Contribution to journal › Article › peer-review

• Investigation of MOS capacitors and SOI-MOSFETs with epitaxial gadolinium oxide (Gd<sub> 2 O<sub> 3) and titanium nitride (TiN) electrodes

  Echtermeyer, T., Gottlob, H., Wahlbrink, T., Mollenhauer, T., Schmidt, M., Efavi, J., Lemme, M. C. & Kurz, H., 2007, In: Solid-state electronics. 51, 4, p. 617-621 5 p.

  Research output: Contribution to journal › Article › peer-review

• Towards graphene field effect transistors

  Lemme, M. C., Echtermeyer, T. J., Baus, M., Szafranek, B. N., Schmidt, M. & Kurz, H., 2007, In: ECS Transactions. 11, 6, p. 413-419 6 p.

  Research output: Contribution to journal › Article › peer-review

  • Graphene 100%
  • Field-Effect Transistor 100%
  • Field Effect Transistors 100%
  • Metal-Oxide-Semiconductor Field-Effect Transistor 50%
  • Monolayer 25%
• 2006

  0.86-nm CET Gate Stacks With Epitaxial High-Dielectrics and FUSI NiSi Metal Electrodes

  Gottlob, H., Echtermeyer, T., Schmidt, M., Mollenhauer, T., Efavi, J., Wahlbrink, T., Lemme, M. C., Czernohorsky, M., Bugiel, E. & Fissel, A., 2006, In: Electron Device Letters, IEEE. 27, 10, p. 814-816 3 p.

  Research output: Contribution to journal › Article › peer-review

• CMOS integration of epitaxial Gd<sub> 2 O<sub> 3 high-<i> k gate dielectrics

  Gottlob, H., Echtermeyer, T., Mollenhauer, T., Efavi, J., Schmidt, M., Wahlbrink, T., Lemme, M. C., Kurz, H., Czernohorsky, M. & Bugiel, E., 2006, In: Solid-state electronics. 50, 6, p. 979-985 7 p.

  Research output: Contribution to journal › Article › peer-review

• Investigation of high-<i> K gate stacks with epitaxial Gd<sub> 2 O<sub> 3 and FUSI NiSi metal gates down to CET= 0.86 nm

  Gottlob, H., Echtermeyer, T., Mollenhauer, T., Efavi, J., Schmidt, M., Wahlbrink, T., Lemme, M. C. & Kurz, H., 2006, In: Materials science in semiconductor processing. 9, 6, p. 904-908 5 p.

  Research output: Contribution to journal › Article › peer-review

• Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high- k dielectrics

  Gottlob, H. D. B., Mollenhauer, T., Wahlbrink, T., Schmidt, M., Echtermeyer, T., Efavi, J. K., Lemme, M. C. & Kurz, H., Mar 2006, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24, 2, p. 710-714 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Dielectrics 100%
  • Silicon on Insulator 100%
  • Metal-Oxide-Semiconductor Field-Effect Transistor 100%
  • Dielectric Material 100%
  • Oxide Semiconductors 100%