Research output per year
Research output per year
- 11 results
Search results
-
2024
Deep level traps in (010) β-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga2O3 substrates
Dawe, C. A., Markevich, V. P., Halsall, M. P., Hawkins, I. D., Peaker, A. R., Nandi, A., Sanyal, I. & Kuball, M., 28 Jul 2024, In: Journal of Applied Physics . 136, 4, 045705 .Research output: Contribution to journal › Article › peer-review
Open Access -
2023
Analysis of Impurity-Related Radiative Transitions in Silicon Materials Using Temperature-Dependent Photoluminescence
Abdul Fattah, T. O., Jacobs, J., Markevich, V. P., Abrosimov, N. V., Halsall, M. P., Crowe, I. F. & Peaker, A. R., 25 Dec 2023, 2023 IEEE 50th Photovoltaic Specialists Conference (PVSC 2023). IEEE, p. 1-6 6 p. (Conference Record of the IEEE Photovoltaic Specialists Conference).Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review
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2022
Formation and Elimination of Electrically Active Thermally-Induced Defects in Float-Zone-Grown Silicon Crystals
De Guzman, J. A. T., Markevich, V. P., Mullins, J., Grant, N., Murphy, J. D., Hiller, D., Halsall, M. P. & Peaker, A. R., 24 Aug 2022, SiliconPV 2021 - 11th International Conference on Crystalline Silicon Photovoltaics. Brendel, R., Ballif, C., Dubois, S., Glunz, S., Hahn, G., Poortmans, J., Verlinden, P. & Weeber, A. (eds.). American Institute of Physics, 130003. (AIP Conference Proceedings; vol. 2487).Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review
Open Access -
2021
Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer
De Guzman, J. A. T., Markevich, V. P., Hawkins, I. D., Coutinho, J., Ayedh, H. M., Binns, J., Abrosimov, N. V., Lastovskii, S. B., Crowe, I. F., Halsall, M. P. & Peaker, A. R., 28 Dec 2021, In: Journal of Applied Physics. 130, 24, 245703.Research output: Contribution to journal › Article › peer-review
Open Access -
Electrical Characterization of Thermally Activated Defects in n-Type Float-Zone Silicon
Zhu, Y., Rougieux, F., Grant, N. E., De Guzman, J. A. T., Murphy, J. D., Markevich, V. P., Coletti, G., Peaker, A. R. & Hameiri, Z., 1 Jan 2021, In: IEEE Journal of Photovoltaics. 11, 1, p. 26-35 10 p., 9244147.Research output: Contribution to journal › Article › peer-review
Open AccessFile187 Downloads (Pure) -
Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline Silicon
De Guzman, J. A. T., Markevich, V. P., Coutinho, J., Abrosimov, N. V., Halsall, M. P. & Peaker, A. R., 8 Sept 2021, In: Solar RRL. 2100459.Research output: Contribution to journal › Article › peer-review
Open Access -
Indium-Doped Silicon for Solar Cells—Light-Induced Degradation and Deep-Level Traps
De Guzman, J. A. T., Markevich, V. P., Hawkins, I. D., Ayedh, H. M., Coutinho, J., Binns, J., Falster, R., Abrosimov, N. V., Crowe, I. F., Halsall, M. P. & Peaker, A. R., 21 Jul 2021, In: Physica Status Solidi (A) Applications and Materials Science.Research output: Contribution to journal › Article › peer-review
Open AccessFile132 Downloads (Pure) -
On the Correlation between Light-Induced Degradation and Minority Carrier Traps in Boron-Doped Czochralski Silicon
Jafari, S., Zhu, Y., Rougieux, F., De Guzman, J. A. T., Markevich, V. P., Peaker, A. R. & Hameiri, Z., 10 Feb 2021, In: ACS Applied Materials and Interfaces. 13, 5, p. 6140–6146Research output: Contribution to journal › Article › peer-review
Open AccessFile122 Downloads (Pure) -
Passivation of thermally-induced defects with hydrogen in float-zone silicon
De Guzman, J. A., Markevich, V., Hiller, D., Hawkins, I., Halsall, M. & Peaker, T., 1 Jul 2021, In: Journal of Physics D Applied Physics. 54, 27, 275105.Research output: Contribution to journal › Article › peer-review
Open Access -
The Role of Si Self-interstitial Atoms in the Formation of Electrically Active Defects in Reverse Biased Silicon n+-p Diodes upon Irradiation with Alpha Particles
Aharodnikau, D. A., Lastovskii, S. B., Shpakovski, S. V., Markevich, V., Halsall, M. & Peaker, T., 29 Mar 2021, (Accepted/In press) In: Physica Status Solidi. A: Applications and Materials Science .Research output: Contribution to journal › Article › peer-review
Open Access -
2020
Minority carrier traps in Czochralski-grown p-type silicon crystals doped with B, Al, Ga, or in impurity atoms
De Guzman, J. A. T., Markevich, V. P., Hammersley, S., Hawkins, I. D., Crowe, I., Abrosimov, N. V., Falster, R., Binns, J., Altermatt, P., Halsall, M. P. & Peaker, A. R., 14 Jun 2020, 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020. IEEE, p. 1013-1018 6 p. 9300860. (Conference Record of the IEEE Photovoltaic Specialists Conference; vol. 2020-June).Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review