Material Science
Al2O3
25%
Aluminum Oxide
23%
Amorphous Material
14%
Anode
10%
Capacitance
20%
Carrier Concentration
5%
Carrier Mobility
9%
Charge Trapping
10%
Contact Resistance
6%
Density
22%
Dielectric Material
50%
Electron Mobility
22%
Electron Transfer
10%
Electronic Circuit
40%
Film
65%
Gallium
17%
Graphene
60%
Heterojunction
11%
Indium
39%
Metal Oxide
10%
Oxide Compound
53%
Oxide Semiconductor
49%
Permittivity
5%
Plasma-Enhanced Chemical Vapor Deposition
5%
Resonator
26%
Schottky Barrier
26%
Schottky Diode
53%
Self Assembled Monolayer
20%
Surface Plasmons
40%
Surface Roughness
5%
Thin Films
55%
Thin-Film Transistor
100%
Tin
6%
Tin Oxide
12%
Titanium Dioxide
10%
Transistor
72%
Zinc Oxide
17%
Engineering
Amplitude Modulation
10%
Anodization
5%
Band Stop
10%
Barrier Height
18%
Breakdown Voltage
5%
Bridge Rectifier
10%
Carrier Mobility
9%
Channel Length
5%
Chemical Vapor Deposition
5%
Current Drain
20%
Cutoff Frequency
7%
Design Rule
5%
Device Performance
7%
Dielectrics
5%
Diode Array
15%
Electric Double Layer
25%
Electric Field
12%
Figure of Merit
5%
Flexible Electronics
10%
Flip Flop Circuits
10%
Frequency Noise
15%
Gate Dielectric
15%
Graphene
50%
Heterojunctions
10%
High Dielectric Constant
5%
Ideality Factor
8%
Indium-Tin-Oxide
5%
Integrated Circuit
5%
Linear Dependence
10%
Low Power Electronics
11%
Major Application
5%
Metal Oxide Semiconductor
10%
Millimeter Wave
6%
Nonlinearity
5%
Oxide Semiconductor
31%
Oxygen Content
5%
Passivation
10%
Performance Improvement
10%
Photodetector
10%
Q Factor
5%
Rectification
12%
Rectification Ratio
6%
Research Project
10%
Residual Pressure
5%
Resistive
13%
Resonator
26%
Responsivity
20%
Room Temperature
16%
Schottky Barrier Diode
10%
Schottky Source
5%
Self-Assembled Monolayers
20%
Self-Powered
10%
Sequential Circuits
10%
Surface Plasmon
40%
Temperature Stress
5%
Terahertz
20%
Thin Films
18%
Thin-Film Transistor
57%
Vapor Deposition
5%