0.25 μm AlGaN/GaN HEMT nonlinearity modelling and characterization over a wide temperature range

Mohammad Abdul Alim; Ali Rezazadeh; Christophe Gaquiere; Mayahsa Mohammed Ali Abdul Hadi; Norshakila Haris; Peter Kyabaggu; Yongjian Zhang

doi:10.1109/EuMIC.2015.7345088

0.25 μm AlGaN/GaN HEMT nonlinearity modelling and characterization over a wide temperature range

Mohammad Abdul Alim, Ali Rezazadeh, Christophe Gaquiere, Mayahsa Mohammed Ali Abdul Hadi, Norshakila Haris, Peter Kyabaggu, Yongjian Zhang

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

0.25 μm gate AlGaN/GaN/SiC HEMT'snonlinearity modelling and characterization over a widetemperature and frequency have been studied for the first time.The nonlinearity of these devices has been carried out using atwo-tone intermodulation distortion. An empirical analyticalmodel has been developed and good agreement was establishedbetween the simulated and measured data. This result is valuablefor the future design optimizations of the advanced GaN basedMMIC’s operating at high temperature.

Original language	English
Title of host publication	Proceedings of the 10th European Microwave Integrated Circuits Conference
Editors	Eric Kerherve
Place of Publication	USA
Publisher	IEEE
Pages	142-143
Number of pages	2
ISBN (Print)	978-2-87487-040-8
DOIs	https://doi.org/10.1109/EuMIC.2015.7345088
Publication status	Published - 7 Sept 2015
Event	10th European Microwave Integrated Circuits Conference - Paris, France Duration: 7 Sept 2015 → 8 Sept 2015 http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7345108&isnumber=7345038

Conference

Conference	10th European Microwave Integrated Circuits Conference
City	Paris, France
Period	7/09/15 → 8/09/15
Internet address	http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7345108&isnumber=7345038

Keywords

AlGaN/GaN/SiC HEMT, nonlinearity, two-tone

Access to Document

10.1109/EuMIC.2015.7345088

Cite this

Alim, M. A., Rezazadeh, A., Gaquiere, C., Mohammed Ali Abdul Hadi, M., Haris, N., Kyabaggu, P., & Zhang, Y. (2015). 0.25 μm AlGaN/GaN HEMT nonlinearity modelling and characterization over a wide temperature range. In E. Kerherve (Ed.), Proceedings of the 10th European Microwave Integrated Circuits Conference (pp. 142-143). IEEE. https://doi.org/10.1109/EuMIC.2015.7345088

@inproceedings{29eb55c6361a4821b0e1bde894110431,

title = "0.25 μm AlGaN/GaN HEMT nonlinearity modelling and characterization over a wide temperature range",

abstract = "0.25 μm gate AlGaN/GaN/SiC HEMT'snonlinearity modelling and characterization over a widetemperature and frequency have been studied for the first time.The nonlinearity of these devices has been carried out using atwo-tone intermodulation distortion. An empirical analyticalmodel has been developed and good agreement was establishedbetween the simulated and measured data. This result is valuablefor the future design optimizations of the advanced GaN basedMMIC{\textquoteright}s operating at high temperature.",

keywords = "AlGaN/GaN/SiC HEMT, nonlinearity, two-tone",

author = "Alim, {Mohammad Abdul} and Ali Rezazadeh and Christophe Gaquiere and {Mohammed Ali Abdul Hadi}, Mayahsa and Norshakila Haris and Peter Kyabaggu and Yongjian Zhang",

note = "This work was in research collaboration with Prof Christophe Gaquiere, University of Lille, IEMN, France. All the microwave devices were designed and fabricated at this venue.; 10th European Microwave Integrated Circuits Conference ; Conference date: 07-09-2015 Through 08-09-2015",

year = "2015",

month = sep,

day = "7",

doi = "10.1109/EuMIC.2015.7345088",

language = "English",

isbn = "978-2-87487-040-8",

pages = "142--143",

editor = "Eric Kerherve",

booktitle = "Proceedings of the 10th European Microwave Integrated Circuits Conference",

publisher = "IEEE",

address = "United States",

url = "http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7345108&isnumber=7345038",

}

Alim, MA, Rezazadeh, A, Gaquiere, C, Mohammed Ali Abdul Hadi, M, Haris, N, Kyabaggu, P & Zhang, Y 2015, 0.25 μm AlGaN/GaN HEMT nonlinearity modelling and characterization over a wide temperature range. in E Kerherve (ed.), Proceedings of the 10th European Microwave Integrated Circuits Conference. IEEE, USA, pp. 142-143, 10th European Microwave Integrated Circuits Conference, Paris, France, 7/09/15. https://doi.org/10.1109/EuMIC.2015.7345088

0.25 μm AlGaN/GaN HEMT nonlinearity modelling and characterization over a wide temperature range. / Alim, Mohammad Abdul; Rezazadeh, Ali; Gaquiere, Christophe et al.
Proceedings of the 10th European Microwave Integrated Circuits Conference. ed. / Eric Kerherve. USA: IEEE, 2015. p. 142-143.

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - 0.25 μm AlGaN/GaN HEMT nonlinearity modelling and characterization over a wide temperature range

AU - Alim, Mohammad Abdul

AU - Rezazadeh, Ali

AU - Gaquiere, Christophe

AU - Mohammed Ali Abdul Hadi, Mayahsa

AU - Haris, Norshakila

AU - Kyabaggu, Peter

AU - Zhang, Yongjian

N1 - This work was in research collaboration with Prof Christophe Gaquiere, University of Lille, IEMN, France. All the microwave devices were designed and fabricated at this venue.

PY - 2015/9/7

Y1 - 2015/9/7

N2 - 0.25 μm gate AlGaN/GaN/SiC HEMT'snonlinearity modelling and characterization over a widetemperature and frequency have been studied for the first time.The nonlinearity of these devices has been carried out using atwo-tone intermodulation distortion. An empirical analyticalmodel has been developed and good agreement was establishedbetween the simulated and measured data. This result is valuablefor the future design optimizations of the advanced GaN basedMMIC’s operating at high temperature.

AB - 0.25 μm gate AlGaN/GaN/SiC HEMT'snonlinearity modelling and characterization over a widetemperature and frequency have been studied for the first time.The nonlinearity of these devices has been carried out using atwo-tone intermodulation distortion. An empirical analyticalmodel has been developed and good agreement was establishedbetween the simulated and measured data. This result is valuablefor the future design optimizations of the advanced GaN basedMMIC’s operating at high temperature.

KW - AlGaN/GaN/SiC HEMT, nonlinearity, two-tone

U2 - 10.1109/EuMIC.2015.7345088

DO - 10.1109/EuMIC.2015.7345088

M3 - Conference contribution

SN - 978-2-87487-040-8

SP - 142

EP - 143

BT - Proceedings of the 10th European Microwave Integrated Circuits Conference

A2 - Kerherve, Eric

PB - IEEE

CY - USA

T2 - 10th European Microwave Integrated Circuits Conference

Y2 - 7 September 2015 through 8 September 2015

ER -

0.25 μm AlGaN/GaN HEMT nonlinearity modelling and characterization over a wide temperature range

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