1 Volt organic transistors with mixed self-assembled monolayer/Al2O3 gate dielectrics

Barbara Urasinska-Wojcik; Nicolas Cocherel; Richard Wilson; Jeremy Burroughes; Jesse Opoku; Michael L Turner; Leszek A Majewski

doi:10.1016/j.orgel.2015.07.009

1 Volt organic transistors with mixed self-assembled monolayer/Al2O3 gate dielectrics

Barbara Urasinska-Wojcik, Nicolas Cocherel, Richard Wilson, Jeremy Burroughes, Jesse Opoku, Michael L Turner, Leszek A Majewski

Research output: Contribution to journal › Article › peer-review

Abstract

Control of the threshold voltage and the subthreshold swing is critical for low voltage transistor operation. In this contribution, organic field-effect transistors (OFETs) operating at 1 V using ultra-thin (∼4 nm), self-assembled monolayer (SAM) modified aluminium oxide layers as the gate dielectric are demonstrated. A solution-processed donor–acceptor semiconducting polymer poly(3,6-di(2-thien-5-yl)-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione)thieno[3,2-b]thiophene) (PDPP2TTT) is used as the active layer. It is shown that the threshold voltage of the fabricated transistors can be simply tuned by carefully controlling the composition of the applied SAM. The optimised OFETs display threshold voltages around 0 V, low subthreshold slopes (150 ± 5 mV/dec), operate with negligible hysteresis and show average saturated field-effect mobilities in excess of 0.1 cm2/V s at 1 V.

Original language	English
Pages (from-to)	20-24
Number of pages	5
Journal	Organic Electronics
Volume	26
DOIs	https://doi.org/10.1016/j.orgel.2015.07.009
Publication status	Published - 1 Nov 2015

Keywords

Organic-field-effect transistor (OFET), low voltage operation, self-assembled monolayer (SAM), polymer semiconductor

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10.1016/j.orgel.2015.07.009

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@article{9bd920b994234642a7b98e285550ea39,

title = "1 Volt organic transistors with mixed self-assembled monolayer/Al2O3 gate dielectrics",

abstract = "Control of the threshold voltage and the subthreshold swing is critical for low voltage transistor operation. In this contribution, organic field-effect transistors (OFETs) operating at 1 V using ultra-thin (∼4 nm), self-assembled monolayer (SAM) modified aluminium oxide layers as the gate dielectric are demonstrated. A solution-processed donor–acceptor semiconducting polymer poly(3,6-di(2-thien-5-yl)-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione)thieno[3,2-b]thiophene) (PDPP2TTT) is used as the active layer. It is shown that the threshold voltage of the fabricated transistors can be simply tuned by carefully controlling the composition of the applied SAM. The optimised OFETs display threshold voltages around 0 V, low subthreshold slopes (150 ± 5 mV/dec), operate with negligible hysteresis and show average saturated field-effect mobilities in excess of 0.1 cm2/V s at 1 V.",

keywords = "Organic-field-effect transistor (OFET), low voltage operation, self-assembled monolayer (SAM), polymer semiconductor",

author = "Barbara Urasinska-Wojcik and Nicolas Cocherel and Richard Wilson and Jeremy Burroughes and Jesse Opoku and Turner, {Michael L} and Majewski, {Leszek A}",

note = "The authors wish to thank Cambridge Display Technology Ltd for their financial support.",

year = "2015",

month = nov,

day = "1",

doi = "10.1016/j.orgel.2015.07.009",

language = "English",

volume = "26",

pages = "20--24",

journal = "Organic Electronics",

publisher = "Elsevier BV",

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TY - JOUR

T1 - 1 Volt organic transistors with mixed self-assembled monolayer/Al2O3 gate dielectrics

AU - Urasinska-Wojcik, Barbara

AU - Cocherel, Nicolas

AU - Wilson, Richard

AU - Burroughes, Jeremy

AU - Opoku, Jesse

AU - Turner, Michael L

AU - Majewski, Leszek A

N1 - The authors wish to thank Cambridge Display Technology Ltd for their financial support.

PY - 2015/11/1

Y1 - 2015/11/1

N2 - Control of the threshold voltage and the subthreshold swing is critical for low voltage transistor operation. In this contribution, organic field-effect transistors (OFETs) operating at 1 V using ultra-thin (∼4 nm), self-assembled monolayer (SAM) modified aluminium oxide layers as the gate dielectric are demonstrated. A solution-processed donor–acceptor semiconducting polymer poly(3,6-di(2-thien-5-yl)-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione)thieno[3,2-b]thiophene) (PDPP2TTT) is used as the active layer. It is shown that the threshold voltage of the fabricated transistors can be simply tuned by carefully controlling the composition of the applied SAM. The optimised OFETs display threshold voltages around 0 V, low subthreshold slopes (150 ± 5 mV/dec), operate with negligible hysteresis and show average saturated field-effect mobilities in excess of 0.1 cm2/V s at 1 V.

AB - Control of the threshold voltage and the subthreshold swing is critical for low voltage transistor operation. In this contribution, organic field-effect transistors (OFETs) operating at 1 V using ultra-thin (∼4 nm), self-assembled monolayer (SAM) modified aluminium oxide layers as the gate dielectric are demonstrated. A solution-processed donor–acceptor semiconducting polymer poly(3,6-di(2-thien-5-yl)-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione)thieno[3,2-b]thiophene) (PDPP2TTT) is used as the active layer. It is shown that the threshold voltage of the fabricated transistors can be simply tuned by carefully controlling the composition of the applied SAM. The optimised OFETs display threshold voltages around 0 V, low subthreshold slopes (150 ± 5 mV/dec), operate with negligible hysteresis and show average saturated field-effect mobilities in excess of 0.1 cm2/V s at 1 V.

KW - Organic-field-effect transistor (OFET), low voltage operation, self-assembled monolayer (SAM), polymer semiconductor

U2 - 10.1016/j.orgel.2015.07.009

DO - 10.1016/j.orgel.2015.07.009

M3 - Article

VL - 26

SP - 20

EP - 24

JO - Organic Electronics

JF - Organic Electronics

ER -

1 Volt organic transistors with mixed self-assembled monolayer/Al2O3 gate dielectrics

Abstract

Keywords

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