13.6 - 24 GHz LNA Design for Radio Astronomy using a Commercially Available 100 nm GaAs pHEMT Process

This paper presents a monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) design suitable for radio astronomy applications based on a commercially available 100 nm gate length gallium arsenide pseudomorphic high electron mobility transistor process. The MMIC exhibits a simulated noise figure of less than 1.2 dB at room temperature between 13.6 - 24 GHz. When measured on-wafer, the forward transmission is greater than 22 dB across the operational bandwidth, with input and output return losses less than -5.5 and -16 dB, respectively. The total power dissipation is 41 mW. Comparing these results with those of state-of-the-art LNAs in the literature shows that this process should be capable of achieving performance comparable to more specialized technology, allowing radio astronomy to take advantage of the benefits of commercial technology.