1.5 μm electroluminescence from organic light emitting diodes integrated on silicon substrates

R. J. Curry, William P. Gillin, A. P. Knights, R. Gwilliam

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We have produced a silicon based organic light emitting diode (OLED) which emits 1.5 μm electroluminescence at room temperature. The emitting layer used was erbium tris(8-hydroxyquinoline) and energy is transferred from excitons formed on the organic ligands into the erbium ion. Characteristic emission is observed through the silicon substrate at 1.5 μm due to the 4I13/2 to 4I15/2 intra-atomic transition. Whilst the device is not suited to conventional OLED applications, due to the long lifetime of the 4I13/2 to 4I15/2 transition, it is a significant step towards the development of a 1.5 μm laser which can be integrated onto a silicon waveguide.

    Original languageEnglish
    Pages (from-to)161-163
    Number of pages3
    JournalOptical Materials Express
    Volume17
    Issue number1-2
    DOIs
    Publication statusPublished - Jun 2001

    Keywords

    • Electroluminescence
    • Erbium
    • Laser
    • Organic diode

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