Abstract
We have produced a silicon based organic light emitting diode (OLED) which emits 1.5 μm electroluminescence at room temperature. The emitting layer used was erbium tris(8-hydroxyquinoline) and energy is transferred from excitons formed on the organic ligands into the erbium ion. Characteristic emission is observed through the silicon substrate at 1.5 μm due to the 4I13/2 to 4I15/2 intra-atomic transition. Whilst the device is not suited to conventional OLED applications, due to the long lifetime of the 4I13/2 to 4I15/2 transition, it is a significant step towards the development of a 1.5 μm laser which can be integrated onto a silicon waveguide.
| Original language | English |
|---|---|
| Pages (from-to) | 161-163 |
| Number of pages | 3 |
| Journal | Optical Materials Express |
| Volume | 17 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - Jun 2001 |
Keywords
- Electroluminescence
- Erbium
- Laser
- Organic diode