@inproceedings{2d0104fae7484d43918cfd59a8af3bd8,
title = "24GHz Zero-Bias Asymmetrical Spacer Layer Tunnel Diode Detectors",
abstract = "This work reports on a novel temperature-insensitive zero-bias GaAs/AlAs Asymmetric Spacer Layer Tunnel diode (ASPAT) detector with a curvature coefficient is 18V-1. The detector was fabricated and experimentally measured in the frequency band (15 to 35) GHz at various input powers. The maximum measured sensitivity is 1300 V/W at 24GHz for a -27dBm incident RF power. The minimum calculated noise equivalent power ∼ 20W/√Hz. The detector shows good performances, comparable to reported detectors based on Schottky or backward diodes. The results reported here validate the physical model developed which can be used to design and fabricate low cost, low power, temperature insensitive high-frequency tunnel diode detector for a range of applications.",
keywords = "equivalent circuit model, tunnel diode, voltage sensitivity, zero-bias detector",
author = "Omar Abdulwahid and Muttlak, {Saad G.} and J. Sexton and M. Missous and Kelly, {M. J.}",
year = "2019",
month = aug,
doi = "10.1109/UCMMT47867.2019.9008351",
language = "English",
series = "12th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies, UCMMT 2019",
publisher = "IEEE",
booktitle = "12th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies, UCMMT 2019",
address = "United States",
note = "12th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies, UCMMT 2019 ; Conference date: 20-08-2019 Through 22-08-2019",
}