Abstract
3D silicon technology is a new way to make silicon detectors using Micro-Electro-Mechanical-Systems (MEMS) processing. In this innovative design the electrodes penetrate through the silicon bulk perpendicular to the surface. Two types of device have been developed - 3D and planar 3D. Both use an edge electrode that eliminates the need for guard rings and provides sensitivity to within a few microns of the edge. 3D technology and its advantages are reviewed and examples of the two types of device are shown. © 2005 Elsevier B.V. All rights reserved.
Original language | English |
---|---|
Pages (from-to) | 122-125 |
Number of pages | 3 |
Journal | Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment |
Volume | 549 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 1 Sept 2005 |
Keywords
- 3D detector
- Active edge
- Planar 3D