A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device

Z. Hamaizia; N. Sengouga; M. Missous; M. C E Yagoub

doi:10.1016/j.mssp.2010.12.003

A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device

Z. Hamaizia, N. Sengouga, M. Missous, M. C E Yagoub

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, the design of a novel low-noise amplifier (LNA) based on 1 μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radioastronomy applications, this amplifier exploits a common-drain configuration as input stage and a common-source inductive degeneration topology as output stage. It exhibits a maximum gain of 30 dB within an input 1 dB compression point of -16 dBm. The noise figure is 0.4 dB with an input return loss greater than -10 dB and an output return loss of -12.5 dB. The LNA consumes 85 mW from a 1.5 V power supply. © 2010 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	89-93
Number of pages	4
Journal	Materials science in semiconductor processing
Volume	14
Issue number	2
DOIs	https://doi.org/10.1016/j.mssp.2010.12.003
Publication status	Published - Jun 2011

Keywords

HEMT
LNA
SKA
SKADS
Telescope

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10.1016/j.mssp.2010.12.003

http://dl.acm.org/citation.cfm?id=1895354.1895377

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title = "A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device",

abstract = "In this work, the design of a novel low-noise amplifier (LNA) based on 1 μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radioastronomy applications, this amplifier exploits a common-drain configuration as input stage and a common-source inductive degeneration topology as output stage. It exhibits a maximum gain of 30 dB within an input 1 dB compression point of -16 dBm. The noise figure is 0.4 dB with an input return loss greater than -10 dB and an output return loss of -12.5 dB. The LNA consumes 85 mW from a 1.5 V power supply. {\textcopyright} 2010 Elsevier Ltd. All rights reserved.",

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author = "Z. Hamaizia and N. Sengouga and M. Missous and Yagoub, {M. C E}",

year = "2011",

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T1 - A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device

AU - Hamaizia, Z.

AU - Sengouga, N.

AU - Missous, M.

AU - Yagoub, M. C E

PY - 2011/6

Y1 - 2011/6

N2 - In this work, the design of a novel low-noise amplifier (LNA) based on 1 μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radioastronomy applications, this amplifier exploits a common-drain configuration as input stage and a common-source inductive degeneration topology as output stage. It exhibits a maximum gain of 30 dB within an input 1 dB compression point of -16 dBm. The noise figure is 0.4 dB with an input return loss greater than -10 dB and an output return loss of -12.5 dB. The LNA consumes 85 mW from a 1.5 V power supply. © 2010 Elsevier Ltd. All rights reserved.

AB - In this work, the design of a novel low-noise amplifier (LNA) based on 1 μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radioastronomy applications, this amplifier exploits a common-drain configuration as input stage and a common-source inductive degeneration topology as output stage. It exhibits a maximum gain of 30 dB within an input 1 dB compression point of -16 dBm. The noise figure is 0.4 dB with an input return loss greater than -10 dB and an output return loss of -12.5 dB. The LNA consumes 85 mW from a 1.5 V power supply. © 2010 Elsevier Ltd. All rights reserved.

KW - HEMT

KW - LNA

KW - SKA

KW - SKADS

KW - Telescope

U2 - 10.1016/j.mssp.2010.12.003

DO - 10.1016/j.mssp.2010.12.003

M3 - Article

SN - 1369-8001

VL - 14

SP - 89

EP - 93

JO - Materials science in semiconductor processing

JF - Materials science in semiconductor processing

IS - 2

ER -

A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device

Abstract

Keywords

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