A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device

Z. Hamaizia; N. Sengouga; M. Missous; M. C.E. Yagoub

A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device

Z. Hamaizia^*, N. Sengouga, M. Missous, M. C.E. Yagoub

^*Corresponding author for this work

University Of Ottawa

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, the design of a novel low noise amplifier (LNA) based on 1μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radio astronomy applications, this amplifier exploits a common drain configuration as an input stage and a common source inductive degeneration topology as an output stage. It exhibits a maximum gain of 30 dB within an input 1- dB compression point of -16 dBm. The noise figure is 0.4 dB with an input return loss greater than -10 dB and an output return loss of - 12.5 dB. The LNA consumes 85 mW from a 1.5 V power supply.

Original language	English
Title of host publication	International Conference on Circuits, Systems and Signals - Proceedings
Publisher	World Scientific and Engineering Academy and Society
Pages	129-133
Number of pages	5
ISBN (Print)	9789604742080
Publication status	Published - 1 Jan 2010

Keywords

HEMT
LNA
SKA
SKADS
Telescope

Cite this

@inproceedings{ce0ced2b08ea4027b433d1965a68915d,

title = "A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device",

abstract = "In this work, the design of a novel low noise amplifier (LNA) based on 1μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radio astronomy applications, this amplifier exploits a common drain configuration as an input stage and a common source inductive degeneration topology as an output stage. It exhibits a maximum gain of 30 dB within an input 1- dB compression point of -16 dBm. The noise figure is 0.4 dB with an input return loss greater than -10 dB and an output return loss of - 12.5 dB. The LNA consumes 85 mW from a 1.5 V power supply.",

keywords = "HEMT, LNA, SKA, SKADS, Telescope",

author = "Z. Hamaizia and N. Sengouga and M. Missous and Yagoub, {M. C.E.}",

year = "2010",

month = jan,

day = "1",

language = "English",

isbn = "9789604742080",

pages = "129--133",

booktitle = "International Conference on Circuits, Systems and Signals - Proceedings",

publisher = "World Scientific and Engineering Academy and Society",

address = "Greece",

}

A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device. / Hamaizia, Z.; Sengouga, N.; Missous, M. et al.
International Conference on Circuits, Systems and Signals - Proceedings. World Scientific and Engineering Academy and Society, 2010. p. 129-133.

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device

AU - Hamaizia, Z.

AU - Sengouga, N.

AU - Missous, M.

AU - Yagoub, M. C.E.

PY - 2010/1/1

Y1 - 2010/1/1

N2 - In this work, the design of a novel low noise amplifier (LNA) based on 1μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radio astronomy applications, this amplifier exploits a common drain configuration as an input stage and a common source inductive degeneration topology as an output stage. It exhibits a maximum gain of 30 dB within an input 1- dB compression point of -16 dBm. The noise figure is 0.4 dB with an input return loss greater than -10 dB and an output return loss of - 12.5 dB. The LNA consumes 85 mW from a 1.5 V power supply.

AB - In this work, the design of a novel low noise amplifier (LNA) based on 1μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radio astronomy applications, this amplifier exploits a common drain configuration as an input stage and a common source inductive degeneration topology as an output stage. It exhibits a maximum gain of 30 dB within an input 1- dB compression point of -16 dBm. The noise figure is 0.4 dB with an input return loss greater than -10 dB and an output return loss of - 12.5 dB. The LNA consumes 85 mW from a 1.5 V power supply.

KW - HEMT

KW - LNA

KW - SKA

KW - SKADS

KW - Telescope

UR - http://www.scopus.com/inward/record.url?scp=79958700277&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:79958700277

SN - 9789604742080

SP - 129

EP - 133

BT - International Conference on Circuits, Systems and Signals - Proceedings

PB - World Scientific and Engineering Academy and Society

ER -

A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device

Abstract

Keywords

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