A Comparative Study of Interaction of End of Range (EOR) Defect Band with Upper Buried Oxide (BOX) Interface for B and BF(2) Implants in SOI and Bulk Silicon with Pre-Amorphizing Implant

M. Kah, A. J. Smith, J. J. Hamilton, S. H. Yeong, B. Columbeau, R. Gwilliam, R. P. Webb, K. J. Kirkby

Research output: Chapter in Book/Conference proceedingChapterpeer-review

Original languageUndefined
Title of host publicationIon Implantation Technology 2008
Publication statusPublished - 2008

Research Beacons, Institutes and Platforms

  • Manchester Cancer Research Centre

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