A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers

D. Zhu; M. J. Kappers; P. M F J Costa; C. McAleese; F. D G Rayment; G. R. Chabrol; D. M. Graham; P. Dawson; E. J. Thrush; J. T. Mullins; C. J. Humphreys

doi:10.1002/pssa.200565250

A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers

D. Zhu, M. J. Kappers, P. M F J Costa, C. McAleese, F. D G Rayment, G. R. Chabrol, D. M. Graham, P. Dawson, E. J. Thrush, J. T. Mullins, C. J. Humphreys

Research output: Contribution to journal › Article › peer-review

Abstract

InGaN multiple quantum well (MQW) structures with AlGaN and AlInGaN barriers were grown on sapphire by metalorganic vapour phase epitaxy (MOVPE). The high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) characterisation results show substantial improvements in the material quality by introducing a small amount of indium into the AlGaN barriers, resulting in improved optical properties, as indicated by low-temperature (6 K) photoluminescence (LT-PL) spectroscopy. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

Original language	English
Pages (from-to)	1819-1823
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	203
Issue number	7
DOIs	https://doi.org/10.1002/pssa.200565250
Publication status	Published - May 2006

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Zhu, D., Kappers, M. J., Costa, P. M. F. J., McAleese, C., Rayment, F. D. G., Chabrol, G. R., Graham, D. M., Dawson, P., Thrush, E. J., Mullins, J. T., & Humphreys, C. J. (2006). A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers. Physica Status Solidi (A) Applications and Materials Science, 203(7), 1819-1823. https://doi.org/10.1002/pssa.200565250

@article{84790e57dbe64be2a3feb0f80700a1db,

title = "A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers",

abstract = "InGaN multiple quantum well (MQW) structures with AlGaN and AlInGaN barriers were grown on sapphire by metalorganic vapour phase epitaxy (MOVPE). The high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) characterisation results show substantial improvements in the material quality by introducing a small amount of indium into the AlGaN barriers, resulting in improved optical properties, as indicated by low-temperature (6 K) photoluminescence (LT-PL) spectroscopy. {\textcopyright} 2006 WILEY-VCH Verlag GmbH & Co. KGaA.",

author = "D. Zhu and Kappers, {M. J.} and Costa, {P. M F J} and C. McAleese and Rayment, {F. D G} and Chabrol, {G. R.} and Graham, {D. M.} and P. Dawson and Thrush, {E. J.} and Mullins, {J. T.} and Humphreys, {C. J.}",

year = "2006",

month = may,

doi = "10.1002/pssa.200565250",

language = "English",

volume = "203",

pages = "1819--1823",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "John Wiley & Sons Ltd",

number = "7",

}

Zhu, D, Kappers, MJ, Costa, PMFJ, McAleese, C, Rayment, FDG, Chabrol, GR, Graham, DM, Dawson, P, Thrush, EJ, Mullins, JT & Humphreys, CJ 2006, 'A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers', Physica Status Solidi (A) Applications and Materials Science, vol. 203, no. 7, pp. 1819-1823. https://doi.org/10.1002/pssa.200565250

TY - JOUR

T1 - A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers

AU - Zhu, D.

AU - Kappers, M. J.

AU - Costa, P. M F J

AU - McAleese, C.

AU - Rayment, F. D G

AU - Chabrol, G. R.

AU - Graham, D. M.

AU - Dawson, P.

AU - Thrush, E. J.

AU - Mullins, J. T.

AU - Humphreys, C. J.

PY - 2006/5

Y1 - 2006/5

N2 - InGaN multiple quantum well (MQW) structures with AlGaN and AlInGaN barriers were grown on sapphire by metalorganic vapour phase epitaxy (MOVPE). The high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) characterisation results show substantial improvements in the material quality by introducing a small amount of indium into the AlGaN barriers, resulting in improved optical properties, as indicated by low-temperature (6 K) photoluminescence (LT-PL) spectroscopy. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

AB - InGaN multiple quantum well (MQW) structures with AlGaN and AlInGaN barriers were grown on sapphire by metalorganic vapour phase epitaxy (MOVPE). The high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) characterisation results show substantial improvements in the material quality by introducing a small amount of indium into the AlGaN barriers, resulting in improved optical properties, as indicated by low-temperature (6 K) photoluminescence (LT-PL) spectroscopy. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

U2 - 10.1002/pssa.200565250

DO - 10.1002/pssa.200565250

M3 - Article

SN - 1862-6300

VL - 203

SP - 1819

EP - 1823

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 7

ER -

A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers

Abstract

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