A comparison of the photoluminescence decay of erbium in silicon and silicon-germanium

K. D. Vernon-Parry; I. D. Hawkins; J. H. Evans-Freeman; P. Dawson; A. R. Peaker

doi:10.1016/S0921-5107(00)00713-3

A comparison of the photoluminescence decay of erbium in silicon and silicon-germanium

K. D. Vernon-Parry, I. D. Hawkins, J. H. Evans-Freeman, P. Dawson, A. R. Peaker

Research output: Contribution to journal › Article › peer-review

Abstract

Photoluminescence decay times have been measured from n- and p-type silicon, a Si/Si1-xGex (x=13%) multi quantum well structure, all implanted with Er, and a Si/Si1-xGex (x=25%) MQW structure uniformly doped with Er during MBE growth. The decaying PL signal is recorded using a signal-averaging transient capture card, and decays over nearly three decades are acquired with a system response time of 10 μs. The Er luminescence is much more intense in the Si/SiGe MQW structures than in silicon hosts. The method of Er-doping in the Si/SiGe heterostructures does not alter the PL decay significantly, but only one component is observed in the decay transient from the Er doped SiGe structures, compared with two in the PL decay of Er doped Si. © 2001 Elsevier Science B.V.

Original language	English
Pages (from-to)	164-166
Number of pages	2
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	81
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(00)00713-3
Publication status	Published - 24 Apr 2001

Keywords

Erbium
PL decay
Silicon
Silicon-germanium

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10.1016/S0921-5107(00)00713-3

Cite this

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title = "A comparison of the photoluminescence decay of erbium in silicon and silicon-germanium",

abstract = "Photoluminescence decay times have been measured from n- and p-type silicon, a Si/Si1-xGex (x=13%) multi quantum well structure, all implanted with Er, and a Si/Si1-xGex (x=25%) MQW structure uniformly doped with Er during MBE growth. The decaying PL signal is recorded using a signal-averaging transient capture card, and decays over nearly three decades are acquired with a system response time of 10 μs. The Er luminescence is much more intense in the Si/SiGe MQW structures than in silicon hosts. The method of Er-doping in the Si/SiGe heterostructures does not alter the PL decay significantly, but only one component is observed in the decay transient from the Er doped SiGe structures, compared with two in the PL decay of Er doped Si. {\textcopyright} 2001 Elsevier Science B.V.",

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AU - Vernon-Parry, K. D.

AU - Hawkins, I. D.

AU - Evans-Freeman, J. H.

AU - Dawson, P.

AU - Peaker, A. R.

PY - 2001/4/24

Y1 - 2001/4/24

N2 - Photoluminescence decay times have been measured from n- and p-type silicon, a Si/Si1-xGex (x=13%) multi quantum well structure, all implanted with Er, and a Si/Si1-xGex (x=25%) MQW structure uniformly doped with Er during MBE growth. The decaying PL signal is recorded using a signal-averaging transient capture card, and decays over nearly three decades are acquired with a system response time of 10 μs. The Er luminescence is much more intense in the Si/SiGe MQW structures than in silicon hosts. The method of Er-doping in the Si/SiGe heterostructures does not alter the PL decay significantly, but only one component is observed in the decay transient from the Er doped SiGe structures, compared with two in the PL decay of Er doped Si. © 2001 Elsevier Science B.V.

AB - Photoluminescence decay times have been measured from n- and p-type silicon, a Si/Si1-xGex (x=13%) multi quantum well structure, all implanted with Er, and a Si/Si1-xGex (x=25%) MQW structure uniformly doped with Er during MBE growth. The decaying PL signal is recorded using a signal-averaging transient capture card, and decays over nearly three decades are acquired with a system response time of 10 μs. The Er luminescence is much more intense in the Si/SiGe MQW structures than in silicon hosts. The method of Er-doping in the Si/SiGe heterostructures does not alter the PL decay significantly, but only one component is observed in the decay transient from the Er doped SiGe structures, compared with two in the PL decay of Er doped Si. © 2001 Elsevier Science B.V.

KW - Erbium

KW - PL decay

KW - Silicon

KW - Silicon-germanium

U2 - 10.1016/S0921-5107(00)00713-3

DO - 10.1016/S0921-5107(00)00713-3

M3 - Article

SN - 0921-5107

VL - 81

SP - 164

EP - 166

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

ER -

A comparison of the photoluminescence decay of erbium in silicon and silicon-germanium

Abstract

Keywords

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