A deep center associated with the presence of nitrogen in GaP

B. L. Smith; T. J. Hayes; A. R. Peaker; D. R. Wight

doi:10.1063/1.88069

A deep center associated with the presence of nitrogen in GaP

B. L. Smith^*, T. J. Hayes, A. R. Peaker, D. R. Wight

^*Corresponding author for this work

EEE - Academic & Research

Research output: Contribution to journal › Article › peer-review

Abstract

The deep-level thermal activation energy spectrum of N-doped liquid-phase-epitaxial (LPE) and liquid-encapsulated-Czochralski (LEC) -grown GaP has been investigated using Schottky barrier thermally stimulated-current (TSC) measurements. We detect a center at E_c-E_t=0.42 eV whose presence in the lattice depends on the deliberate addition of N to the material. The concentration of this center varies approximately as (N _d-N_a)² in n-type material, and the value of electron capture cross section for the center (S_t≈7×10 ^-15 cm²) indicates that it could be a strong recombination center in N-doped p-type GaP. Separate experiments suggest that this center is strongly localized, and that it is not a simple complex involving shallow donors and native defects.

Original language	English
Pages (from-to)	122-124
Number of pages	3
Journal	Applied Physics Letters
Volume	26
Issue number	3
DOIs	https://doi.org/10.1063/1.88069
Publication status	Published - 1 Dec 1975

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title = "A deep center associated with the presence of nitrogen in GaP",

abstract = "The deep-level thermal activation energy spectrum of N-doped liquid-phase-epitaxial (LPE) and liquid-encapsulated-Czochralski (LEC) -grown GaP has been investigated using Schottky barrier thermally stimulated-current (TSC) measurements. We detect a center at Ec-Et=0.42 eV whose presence in the lattice depends on the deliberate addition of N to the material. The concentration of this center varies approximately as (N d-Na)2 in n-type material, and the value of electron capture cross section for the center (St≈7×10 -15 cm2) indicates that it could be a strong recombination center in N-doped p-type GaP. Separate experiments suggest that this center is strongly localized, and that it is not a simple complex involving shallow donors and native defects.",

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T1 - A deep center associated with the presence of nitrogen in GaP

AU - Smith, B. L.

AU - Hayes, T. J.

AU - Peaker, A. R.

AU - Wight, D. R.

PY - 1975/12/1

Y1 - 1975/12/1

N2 - The deep-level thermal activation energy spectrum of N-doped liquid-phase-epitaxial (LPE) and liquid-encapsulated-Czochralski (LEC) -grown GaP has been investigated using Schottky barrier thermally stimulated-current (TSC) measurements. We detect a center at Ec-Et=0.42 eV whose presence in the lattice depends on the deliberate addition of N to the material. The concentration of this center varies approximately as (N d-Na)2 in n-type material, and the value of electron capture cross section for the center (St≈7×10 -15 cm2) indicates that it could be a strong recombination center in N-doped p-type GaP. Separate experiments suggest that this center is strongly localized, and that it is not a simple complex involving shallow donors and native defects.

AB - The deep-level thermal activation energy spectrum of N-doped liquid-phase-epitaxial (LPE) and liquid-encapsulated-Czochralski (LEC) -grown GaP has been investigated using Schottky barrier thermally stimulated-current (TSC) measurements. We detect a center at Ec-Et=0.42 eV whose presence in the lattice depends on the deliberate addition of N to the material. The concentration of this center varies approximately as (N d-Na)2 in n-type material, and the value of electron capture cross section for the center (St≈7×10 -15 cm2) indicates that it could be a strong recombination center in N-doped p-type GaP. Separate experiments suggest that this center is strongly localized, and that it is not a simple complex involving shallow donors and native defects.

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A deep center associated with the presence of nitrogen in GaP

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