A Facile Method for the Production of SnS Thin Films from Melt Reactions

Mundher Al-Shakban, Z Xie, N Savjani, MA Malik, Paul O'Brien

    Research output: Contribution to journalArticlepeer-review


    Tin(II)O-ethylxanthate [Sn(S2COEt)2] was prepared and used as a single-source precursor for the deposition of SnS thin films by a melt method. Polycrystalline, (111) orientated, orthorhombic-SnS films with controllable elemental stoichiometries (of between Sn1.3S and SnS) were reliably produced by selecting heating temperatures between 200 and 400 °C. The direct optical band gaps of the SnS films ranged from 1.26 to 1.88 eV and were strongly influenced by its Sn/S ratio. The precursor [Sn(S2COEt)2] were characterised by thermogravimetric analysis (TGA) and attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR). The as-prepared SnS films were characterised by scanning electron microscopy (SEM), energy dispersive X-ray (EDX) spectroscopy, powder X-ray diffractometry (p-XRD), Raman spectroscopy and UV-Vis spectroscopy.
    Original languageEnglish
    JournalJournal of Materials Science
    Publication statusPublished - Jan 2016


    • Tin sulfide, single source precursors, thin films, melt reaction, bandgap tuning.


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