A Facile Method for the Production of SnS Thin Films from Melt Reactions

Mundher Al-Shakban; Z Xie; N Savjani; MA Malik; Paul O'Brien

doi:10.1007/s10853-016-9906-7

A Facile Method for the Production of SnS Thin Films from Melt Reactions

Mundher Al-Shakban, Z Xie, N Savjani, MA Malik, Paul O'Brien

Research output: Contribution to journal › Article › peer-review

Abstract

Tin(II)O-ethylxanthate [Sn(S2COEt)2] was prepared and used as a single-source precursor for the deposition of SnS thin films by a melt method. Polycrystalline, (111) orientated, orthorhombic-SnS films with controllable elemental stoichiometries (of between Sn1.3S and SnS) were reliably produced by selecting heating temperatures between 200 and 400 °C. The direct optical band gaps of the SnS films ranged from 1.26 to 1.88 eV and were strongly influenced by its Sn/S ratio. The precursor [Sn(S2COEt)2] were characterised by thermogravimetric analysis (TGA) and attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR). The as-prepared SnS films were characterised by scanning electron microscopy (SEM), energy dispersive X-ray (EDX) spectroscopy, powder X-ray diffractometry (p-XRD), Raman spectroscopy and UV-Vis spectroscopy.

Original language	English
Journal	Journal of Materials Science
DOIs	https://doi.org/10.1007/s10853-016-9906-7
Publication status	Published - Jan 2016

Keywords

Tin sulfide, single source precursors, thin films, melt reaction, bandgap tuning.

Access to Document

10.1007/s10853-016-9906-7

Cite this

@article{98424ce162694961b35f414d2587d12f,

title = "A Facile Method for the Production of SnS Thin Films from Melt Reactions",

abstract = "Tin(II)O-ethylxanthate [Sn(S2COEt)2] was prepared and used as a single-source precursor for the deposition of SnS thin films by a melt method. Polycrystalline, (111) orientated, orthorhombic-SnS films with controllable elemental stoichiometries (of between Sn1.3S and SnS) were reliably produced by selecting heating temperatures between 200 and 400 °C. The direct optical band gaps of the SnS films ranged from 1.26 to 1.88 eV and were strongly influenced by its Sn/S ratio. The precursor [Sn(S2COEt)2] were characterised by thermogravimetric analysis (TGA) and attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR). The as-prepared SnS films were characterised by scanning electron microscopy (SEM), energy dispersive X-ray (EDX) spectroscopy, powder X-ray diffractometry (p-XRD), Raman spectroscopy and UV-Vis spectroscopy.",

keywords = "Tin sulfide, single source precursors, thin films, melt reaction, bandgap tuning.",

author = "Mundher Al-Shakban and Z Xie and N Savjani and MA Malik and Paul O'Brien",

note = "The authors would like to acknowledge the EPSRC Core Capability in Chemistry (CCC), grant number EP/K039547/1 (Director: Prof. Gareth Morris) for access to numerous analytical equipment. The authors would also like to thank Dr. Christopher Wilkins at School of Materials University of Manchester for helpful discussions on SEM and EDX. MAS acknowledge the Iraqi Culture Attach{\'e} in London for financial support. NS thanks the Parker family for funding his position.The authors would like to acknowledge the EPSRC Core Capability in Chemistry (CCC), grant number EP/K039547/1 (Director: Prof. Gareth Morris) for access to numerous analytical equipment.",

year = "2016",

month = jan,

doi = "10.1007/s10853-016-9906-7",

language = "English",

journal = "Journal of Materials Science",

issn = "0022-2461",

publisher = "Springer Nature",

}

TY - JOUR

T1 - A Facile Method for the Production of SnS Thin Films from Melt Reactions

AU - Al-Shakban, Mundher

AU - Xie, Z

AU - Savjani, N

AU - Malik, MA

AU - O'Brien, Paul

N1 - The authors would like to acknowledge the EPSRC Core Capability in Chemistry (CCC), grant number EP/K039547/1 (Director: Prof. Gareth Morris) for access to numerous analytical equipment. The authors would also like to thank Dr. Christopher Wilkins at School of Materials University of Manchester for helpful discussions on SEM and EDX. MAS acknowledge the Iraqi Culture Attaché in London for financial support. NS thanks the Parker family for funding his position.The authors would like to acknowledge the EPSRC Core Capability in Chemistry (CCC), grant number EP/K039547/1 (Director: Prof. Gareth Morris) for access to numerous analytical equipment.

PY - 2016/1

Y1 - 2016/1

N2 - Tin(II)O-ethylxanthate [Sn(S2COEt)2] was prepared and used as a single-source precursor for the deposition of SnS thin films by a melt method. Polycrystalline, (111) orientated, orthorhombic-SnS films with controllable elemental stoichiometries (of between Sn1.3S and SnS) were reliably produced by selecting heating temperatures between 200 and 400 °C. The direct optical band gaps of the SnS films ranged from 1.26 to 1.88 eV and were strongly influenced by its Sn/S ratio. The precursor [Sn(S2COEt)2] were characterised by thermogravimetric analysis (TGA) and attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR). The as-prepared SnS films were characterised by scanning electron microscopy (SEM), energy dispersive X-ray (EDX) spectroscopy, powder X-ray diffractometry (p-XRD), Raman spectroscopy and UV-Vis spectroscopy.

AB - Tin(II)O-ethylxanthate [Sn(S2COEt)2] was prepared and used as a single-source precursor for the deposition of SnS thin films by a melt method. Polycrystalline, (111) orientated, orthorhombic-SnS films with controllable elemental stoichiometries (of between Sn1.3S and SnS) were reliably produced by selecting heating temperatures between 200 and 400 °C. The direct optical band gaps of the SnS films ranged from 1.26 to 1.88 eV and were strongly influenced by its Sn/S ratio. The precursor [Sn(S2COEt)2] were characterised by thermogravimetric analysis (TGA) and attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR). The as-prepared SnS films were characterised by scanning electron microscopy (SEM), energy dispersive X-ray (EDX) spectroscopy, powder X-ray diffractometry (p-XRD), Raman spectroscopy and UV-Vis spectroscopy.

KW - Tin sulfide, single source precursors, thin films, melt reaction, bandgap tuning.

U2 - 10.1007/s10853-016-9906-7

DO - 10.1007/s10853-016-9906-7

M3 - Article

SN - 0022-2461

JO - Journal of Materials Science

JF - Journal of Materials Science

ER -

A Facile Method for the Production of SnS Thin Films from Melt Reactions

Abstract

Keywords

Access to Document

Fingerprint

Cite this