A far-infrared RAIRS investigation of SnCl4 on a silica surface using the buried metal layer approach

M. J. Pilling, P. Gardner, M. E. Penible, M. Surman

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Far-infra red RAIRS spectroscopy employing synchrotron radiation as a source, has been used to study the interaction of SnCl4 on a thin-film silica surface. This has been made possible by growing the silica film on a highly reflecting tungsten substrate, enabling the conventional RAIRS geometry to be used. We show that reasonable S/N RAIRS spectra can be obtained in this region, even from films up to 1000 Å thick, enabling subtle details in the spectrum of the chemisorbed species to be obtained. © 1998 Elsevier Science B.V. All rights reserved.
    Original languageEnglish
    Pages (from-to)-L7
    JournalSurface Science
    Volume418
    Issue number1
    Publication statusPublished - 27 Nov 1998

    Keywords

    • Chemical vapour deposition
    • Chemisorption
    • Glass surfaces
    • Infra-red absorption spectroscopy
    • Reflection spectroscopy
    • Silicon oxide
    • SnCl4
    • Tin oxides

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