A graphene field-effect device

Max C. Lemme; Tim J. Echtermeyer; Matthias Baus; Heinrich Kurz

doi:10.1109/LED.2007.891668

A graphene field-effect device

Max C. Lemme
, Tim J. Echtermeyer
, Matthias Baus
, Heinrich Kurz

Research output: Contribution to journal › Article › peer-review

Abstract

In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOScompatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs © 2007 IEEE.

Original language	English
Pages (from-to)	282-284
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	28
Issue number	4
DOIs	https://doi.org/10.1109/LED.2007.891668
Publication status	Published - Apr 2007

Keywords

Field effect
Graphene
Mobility
MOSFET
Transistor

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10.1109/LED.2007.891668

Cite this

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title = "A graphene field-effect device",

abstract = "In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOScompatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs {\textcopyright} 2007 IEEE.",

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N2 - In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOScompatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs © 2007 IEEE.

AB - In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOScompatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs © 2007 IEEE.

KW - Field effect

KW - Graphene

KW - Mobility

KW - MOSFET

KW - Transistor

U2 - 10.1109/LED.2007.891668

DO - 10.1109/LED.2007.891668

M3 - Article

SN - 0741-3106

VL - 28

SP - 282

EP - 284

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

A graphene field-effect device

Abstract

Keywords

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