A High-Resolution Versatile Focused Ion Implantation Platform for Nanoscale Engineering

Mason Adshead, Maddison Coke, Gianfranco Aresta, Allen Bellew, Matija Lagator, Kexue Li, Yi Cui, Rongsheng Cai, Abdulwahab Almutawa, Sarah Haigh, Katie Moore, Nicholas Lockyer, Christopher M. Gourlay, Richard Curry

Research output: Contribution to journalArticlepeer-review

Abstract

The ability to spatially control and modify material properties on the nanoscale, including within nanoscale objects themselves, is a fundamental requirement for the development of advanced nanotechnologies. We demonstrate the development of a platform for nanoscale advanced materials engineering (P-NAME) designed to meet this demand. P-NAME delivers a high-resolution focused ion beam system with a co-incident scanning electron microscope and secondary electron detection of single-ion implantation events. We demonstrate the isotopic mass resolution capability of the P-NAME system for a wide range of ion species, offering access to the implantation of isotopes that are vital for nanomaterials engineering and nano-functionalisation. The performance of the isotopic mass selection is independently validated using secondary ion mass spectrometry (SIMS) for a number of species implanted into intrinsic silicon. The SIMS results are shown to be in good agreement with dynamic ion implantation simulations, demonstrating the validity of this simulation approach. We also demonstrate the wider performance capabilities of P-NAME including sub-10 nm ion beam imaging resolution and the ability to perform direct-write ion beam doping and nanoscale ion lithography.
Original languageEnglish
JournalAdvanced Engineering Materials
Publication statusAccepted/In press - 25 Aug 2023

Keywords

  • nanomaterials engineering
  • focused ion beam
  • nanoscale implantation
  • nanoscale lithography
  • high-resolution isotopic doping

Research Beacons, Institutes and Platforms

  • Photon Science Institute

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  • NAME

    Coke, M. & Mckenzie, B. E.

    Project: Research

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