@inproceedings{a37099588aee434e96e3e55382bafa16,
title = "A multi-stack quantum barrier varactor on InP for MM-wave frequency tripling",
abstract = "Conventional Multi-Stack Quantum Barrier Varactor (MS-OBV) diodes on GaAs suffer from leaky barriers and low breakdown voltages which limits their performance in high power applications. Using a lattice matched InGaAs/InAIAs/InGaAs barriers on InP we have grown a 10 stack device wih a very low leakage current and high breakdown voltage. Measurements show a very low series resistance of 1.2 ¿ with breakdown voltage reaching up to 22 volts. The power capability of this new diode has been investigated by simulations and measurements. The obtained results indicate a good agreement with 22 dBm at 60 GHz and 19.6 dBm at 93 GHz with no saturation effect observed in leaky barrier devices.",
author = "Ali Rahal and Bosislo, {Renato G.} and Chris Rogers and John Ovey and M. Missous",
year = "1995",
month = jan,
day = "1",
doi = "10.1109/EUMA.1995.337109",
language = "English",
series = "1995 25th European Microwave Conference",
publisher = "IEEE",
pages = "981--984",
booktitle = "1995 25th European Microwave Conference",
address = "United States",
note = "25th European Microwave Conference, EuMC 1995 ; Conference date: 04-09-1995",
}