A new, fast method for the computer simulation of CV profiles in multilayer structures

J. S. Rimmer, M. Missous, A. R. Peaker

Research output: Contribution to journalArticlepeer-review

Abstract

A method of simulating the CV profiles of multilayer isotype semiconductors is presented which utilises a novel, non-iterative approach to the solution of Poisson's equation. Computer run times are typically of the order of a few minutes using PASCAL on a HP series 200 desk-top computer. Interface charge, degeneracy and deep levels may be included and the effects of quantum confinement may be approximated in some circumstances. We show the effects of varying the interface parameters on the resulting profiles and illustrate the technique with a fit to a CV profile, taken from a five-layer heterostructure, which has enabled us to determine the charged states at each interface and relate these states to interfacial recombination.

Original languageEnglish
Pages (from-to)149-153
Number of pages5
JournalApplied Surface Science
Volume50
Issue number1-4
DOIs
Publication statusPublished - 2 Jun 1991

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