A novel gate insulator for flexible electronics

Leszek Majewski; Martin Grell; Simon Ogier; Janos Veres

A novel gate insulator for flexible electronics

Leszek Majewski, Martin Grell, Simon Ogier, Janos Veres

The University of Sheffield

Research output: Contribution to journal › Article › peer-review

Abstract

Field effect transistors using a poly(triaryl amine) p-channel organic semiconductor in conjunction with anodised aluminium oxide as the gate insulator (Al2O3 on Al) are demonstrated. Anodised films are pinhole-free, homogenous oxide layers of precisely controlled thickness. The anodisation process requires no vacuum steps; anodised Al2O3 is insoluble in organic solvents, and Al films are cheaply available as laminates on flexible substrates. Anodised Al2O3 is confirmed to have high gate capacitance (60 nF/cm2) and electric breakdown strength (>3 MV/cm in the working device). This property profile answers to the demands on gate insulators for flexible electronics applications.

Original language	English
Pages (from-to)	27-32
Number of pages	6
Journal	Organic Electronics
Volume	4
Issue number	1
Publication status	Published - 15 Mar 2003

Keywords

Anodisation
Aluminium oxide
Organic field-effect transistor (OFET)

Cite this

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title = "A novel gate insulator for flexible electronics",

abstract = "Field effect transistors using a poly(triaryl amine) p-channel organic semiconductor in conjunction with anodised aluminium oxide as the gate insulator (Al2O3 on Al) are demonstrated. Anodised films are pinhole-free, homogenous oxide layers of precisely controlled thickness. The anodisation process requires no vacuum steps; anodised Al2O3 is insoluble in organic solvents, and Al films are cheaply available as laminates on flexible substrates. Anodised Al2O3 is confirmed to have high gate capacitance (60 nF/cm2) and electric breakdown strength (>3 MV/cm in the working device). This property profile answers to the demands on gate insulators for flexible electronics applications.",

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AU - Majewski, Leszek

AU - Grell, Martin

AU - Ogier, Simon

AU - Veres, Janos

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N2 - Field effect transistors using a poly(triaryl amine) p-channel organic semiconductor in conjunction with anodised aluminium oxide as the gate insulator (Al2O3 on Al) are demonstrated. Anodised films are pinhole-free, homogenous oxide layers of precisely controlled thickness. The anodisation process requires no vacuum steps; anodised Al2O3 is insoluble in organic solvents, and Al films are cheaply available as laminates on flexible substrates. Anodised Al2O3 is confirmed to have high gate capacitance (60 nF/cm2) and electric breakdown strength (>3 MV/cm in the working device). This property profile answers to the demands on gate insulators for flexible electronics applications.

AB - Field effect transistors using a poly(triaryl amine) p-channel organic semiconductor in conjunction with anodised aluminium oxide as the gate insulator (Al2O3 on Al) are demonstrated. Anodised films are pinhole-free, homogenous oxide layers of precisely controlled thickness. The anodisation process requires no vacuum steps; anodised Al2O3 is insoluble in organic solvents, and Al films are cheaply available as laminates on flexible substrates. Anodised Al2O3 is confirmed to have high gate capacitance (60 nF/cm2) and electric breakdown strength (>3 MV/cm in the working device). This property profile answers to the demands on gate insulators for flexible electronics applications.

KW - Anodisation

KW - Aluminium oxide

KW - Organic field-effect transistor (OFET)

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VL - 4

SP - 27

EP - 32

JO - Organic Electronics

JF - Organic Electronics

IS - 1

ER -

A novel gate insulator for flexible electronics

Abstract

Keywords

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