A ruggedly packaged D-B and GaAs Gunn diode with hot electron injection suitable for volume manufacture

N. Farrington; P. Norton; M. Can; J. Sly; M. Missous

doi:10.1109/MWSYM.2008.4633158

A ruggedly packaged D-B and GaAs Gunn diode with hot electron injection suitable for volume manufacture

N. Farrington, P. Norton, M. Can, J. Sly, M. Missous

Research output: Chapter in Book/Conference proceeding › Conference contribution

Abstract

GaAs Gunn diodes optimized for use in second harmonic mode at 125GHz have been fabricated with hot electron injection based on a novel step-graded Al xGa(1-x)As launcher. Testing was performed after encapsulation in rugged, hermetically sealed packages using a similar process to that performed for volume manufacture of devices for the automotive industry. RF power levels up to 40mW at 121.5GHz in second harmonic mode have been obtained with an efficiency of 1.45% and an average frequency drift of 0.5MHz/°C. Unlike the majority of state-of-the-art unpackaged devices reported in the literature which rely on diamond heatsinking, these packaged devices incorporate an integral gold heatsink, and so offer lower unit cost, increased manufacturability, and ease of integration into real-world systems. © 2008 IEEE.

Original language	English
Title of host publication	IEEE MTT-S International Microwave Symposium Digest\|IEEE MTT S Int Microwave Symp Dig
Pages	281-284
Number of pages	3
DOIs	https://doi.org/10.1109/MWSYM.2008.4633158
Publication status	Published - 2008
Event	2008 IEEE MTT-S International Microwave Symposium Digest, MTT - Atlanta, GA Duration: 1 Jul 2008 → … http://<Go to ISI>://000262480000071

Conference

Conference	2008 IEEE MTT-S International Microwave Symposium Digest, MTT
City	Atlanta, GA
Period	1/07/08 → …
Internet address	http://<Go to ISI>://000262480000071

Keywords

Gunn devices
Millimeter-wave generation
Millimeter-wave oscillators

Access to Document

10.1109/MWSYM.2008.4633158

Molecular Beam Epitaxy applied to quantum devices for industrial applications
Missous, M. (Participant), (Participant), Haned, N. (Participant), (Participant), Boudejelida, B. (Participant) & (Participant)
Impact: Economic, Technological

Cite this

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title = "A ruggedly packaged D-B and GaAs Gunn diode with hot electron injection suitable for volume manufacture",

abstract = "GaAs Gunn diodes optimized for use in second harmonic mode at 125GHz have been fabricated with hot electron injection based on a novel step-graded Al xGa(1-x)As launcher. Testing was performed after encapsulation in rugged, hermetically sealed packages using a similar process to that performed for volume manufacture of devices for the automotive industry. RF power levels up to 40mW at 121.5GHz in second harmonic mode have been obtained with an efficiency of 1.45% and an average frequency drift of 0.5MHz/°C. Unlike the majority of state-of-the-art unpackaged devices reported in the literature which rely on diamond heatsinking, these packaged devices incorporate an integral gold heatsink, and so offer lower unit cost, increased manufacturability, and ease of integration into real-world systems. {\textcopyright} 2008 IEEE.",

keywords = "Gunn devices, Millimeter-wave generation, Millimeter-wave oscillators",

author = "N. Farrington and P. Norton and M. Can and J. Sly and M. Missous",

note = "Farrington, N. Norton, P. Carr, M. Sly, J. Missous, M.; 2008 IEEE MTT-S International Microwave Symposium Digest, MTT ; Conference date: 01-07-2008",

year = "2008",

doi = "10.1109/MWSYM.2008.4633158",

language = "English",

isbn = "9781424417810",

pages = "281--284",

booktitle = "IEEE MTT-S International Microwave Symposium Digest|IEEE MTT S Int Microwave Symp Dig",

url = "http://<Go to ISI>://000262480000071",

}

Farrington, N, Norton, P, Can, M, Sly, J & Missous, M 2008, A ruggedly packaged D-B and GaAs Gunn diode with hot electron injection suitable for volume manufacture. in IEEE MTT-S International Microwave Symposium Digest|IEEE MTT S Int Microwave Symp Dig. pp. 281-284, 2008 IEEE MTT-S International Microwave Symposium Digest, MTT, Atlanta, GA, 1/07/08. https://doi.org/10.1109/MWSYM.2008.4633158

TY - GEN

T1 - A ruggedly packaged D-B and GaAs Gunn diode with hot electron injection suitable for volume manufacture

AU - Farrington, N.

AU - Norton, P.

AU - Can, M.

AU - Sly, J.

AU - Missous, M.

N1 - Farrington, N. Norton, P. Carr, M. Sly, J. Missous, M.

PY - 2008

Y1 - 2008

N2 - GaAs Gunn diodes optimized for use in second harmonic mode at 125GHz have been fabricated with hot electron injection based on a novel step-graded Al xGa(1-x)As launcher. Testing was performed after encapsulation in rugged, hermetically sealed packages using a similar process to that performed for volume manufacture of devices for the automotive industry. RF power levels up to 40mW at 121.5GHz in second harmonic mode have been obtained with an efficiency of 1.45% and an average frequency drift of 0.5MHz/°C. Unlike the majority of state-of-the-art unpackaged devices reported in the literature which rely on diamond heatsinking, these packaged devices incorporate an integral gold heatsink, and so offer lower unit cost, increased manufacturability, and ease of integration into real-world systems. © 2008 IEEE.

AB - GaAs Gunn diodes optimized for use in second harmonic mode at 125GHz have been fabricated with hot electron injection based on a novel step-graded Al xGa(1-x)As launcher. Testing was performed after encapsulation in rugged, hermetically sealed packages using a similar process to that performed for volume manufacture of devices for the automotive industry. RF power levels up to 40mW at 121.5GHz in second harmonic mode have been obtained with an efficiency of 1.45% and an average frequency drift of 0.5MHz/°C. Unlike the majority of state-of-the-art unpackaged devices reported in the literature which rely on diamond heatsinking, these packaged devices incorporate an integral gold heatsink, and so offer lower unit cost, increased manufacturability, and ease of integration into real-world systems. © 2008 IEEE.

KW - Gunn devices

KW - Millimeter-wave generation

KW - Millimeter-wave oscillators

U2 - 10.1109/MWSYM.2008.4633158

DO - 10.1109/MWSYM.2008.4633158

M3 - Conference contribution

SN - 9781424417810

SP - 281

EP - 284

BT - IEEE MTT-S International Microwave Symposium Digest|IEEE MTT S Int Microwave Symp Dig

T2 - 2008 IEEE MTT-S International Microwave Symposium Digest, MTT

Y2 - 1 July 2008

ER -

A ruggedly packaged D-B and GaAs Gunn diode with hot electron injection suitable for volume manufacture

Abstract

Conference

Keywords

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Impacts

Molecular Beam Epitaxy applied to quantum devices for industrial applications

Cite this