A scalable network model for electrically tunable ferroelectric domain structure in twistronic bilayers of two-dimensional semiconductors

Vladimir Enaldiev, Fabio Ferreira, Vladimir Fal'ko

Research output: Contribution to journalArticlepeer-review

Abstract

Moire structures in small-angle-twisted bilayers of two-dimensional (2D) semiconductors with a broken-symmetry interface form arrays of ferroelectric (FE) domains with periodically alternating out-of-plane polarization. Here, we propose a network theory for the tunability of such FE domain structure by applying an electric field perpendicular to the 2D crystal. Using multiscale analysis, we derive a fully parametrized string-theory-like description of the domain wall network (DWN) and show that it undergoes a qualitative change, after the arcs of partial dislocation (PD) like domain walls merge (near the network nodes) into streaks of perfect screw dislocations (PSD), which happens at a threshold displacement field dependent on the DWN period.
Original languageEnglish
JournalNano Letters
Publication statusAccepted/In press - 2 Feb 2022

Research Beacons, Institutes and Platforms

  • National Graphene Institute

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