A simple method for controllable solution doping of complete polymer field-effect transistors

Ian D. V. Ingram; Daniel J. Tate; Adam V. S. Parry; R. Sebastian Sprick; Michael Turner

doi:10.1063/1.4871096

A simple method for controllable solution doping of complete polymer field-effect transistors

Ian D. V. Ingram, Daniel J. Tate, Adam V. S. Parry, R. Sebastian Sprick, Michael Turner

Research output: Contribution to journal › Article › peer-review

Abstract

Controllable p-type doping of both poly(3-hexylthiophene) (P3HT) and poly(triarylamine) (PTAA) organic field effect transistors (OFETs) was achieved by immersing complete top-contact OFETs in a solution of 2,3,5,6-tetrafluoro-7, 7,8,8-tetracyanoquinodimethane (F4-TCNQ) in acetone. As this method is applied to complete devices, it has a greater utility than methods involving doping of the solution prior to film deposition as it allows separation of the device processing and doping steps, facilitating the use of optimal processing conditions at each stage. It was found that by varying immersion time and the concentration of the dopant solution, it was possible to vary the threshold voltage for a P3HT OFET by over 30V. Although PTAA devices are less sensitive to oxidation by F4-TCNQ than OFETs using P3HT, they can also be controllably doped by this method up to a threshold voltage of +12 V. © 2014 AIP Publishing LLC.

Original language	English
Article number	153304
Journal	Applied Physics Letters
Volume	104
Issue number	15
DOIs	https://doi.org/10.1063/1.4871096 https://doi.org/10.1063/1.4871096
Publication status	Published - 14 Apr 2014

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title = "A simple method for controllable solution doping of complete polymer field-effect transistors",

abstract = "Controllable p-type doping of both poly(3-hexylthiophene) (P3HT) and poly(triarylamine) (PTAA) organic field effect transistors (OFETs) was achieved by immersing complete top-contact OFETs in a solution of 2,3,5,6-tetrafluoro-7, 7,8,8-tetracyanoquinodimethane (F4-TCNQ) in acetone. As this method is applied to complete devices, it has a greater utility than methods involving doping of the solution prior to film deposition as it allows separation of the device processing and doping steps, facilitating the use of optimal processing conditions at each stage. It was found that by varying immersion time and the concentration of the dopant solution, it was possible to vary the threshold voltage for a P3HT OFET by over 30V. Although PTAA devices are less sensitive to oxidation by F4-TCNQ than OFETs using P3HT, they can also be controllably doped by this method up to a threshold voltage of +12 V. {\textcopyright} 2014 AIP Publishing LLC.",

author = "Ingram, {Ian D. V.} and Tate, {Daniel J.} and Parry, {Adam V. S.} and Sprick, {R. Sebastian} and Michael Turner",

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doi = "10.1063/1.4871096",

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AU - Ingram, Ian D. V.

AU - Tate, Daniel J.

AU - Parry, Adam V. S.

AU - Sprick, R. Sebastian

AU - Turner, Michael

PY - 2014/4/14

Y1 - 2014/4/14

N2 - Controllable p-type doping of both poly(3-hexylthiophene) (P3HT) and poly(triarylamine) (PTAA) organic field effect transistors (OFETs) was achieved by immersing complete top-contact OFETs in a solution of 2,3,5,6-tetrafluoro-7, 7,8,8-tetracyanoquinodimethane (F4-TCNQ) in acetone. As this method is applied to complete devices, it has a greater utility than methods involving doping of the solution prior to film deposition as it allows separation of the device processing and doping steps, facilitating the use of optimal processing conditions at each stage. It was found that by varying immersion time and the concentration of the dopant solution, it was possible to vary the threshold voltage for a P3HT OFET by over 30V. Although PTAA devices are less sensitive to oxidation by F4-TCNQ than OFETs using P3HT, they can also be controllably doped by this method up to a threshold voltage of +12 V. © 2014 AIP Publishing LLC.

AB - Controllable p-type doping of both poly(3-hexylthiophene) (P3HT) and poly(triarylamine) (PTAA) organic field effect transistors (OFETs) was achieved by immersing complete top-contact OFETs in a solution of 2,3,5,6-tetrafluoro-7, 7,8,8-tetracyanoquinodimethane (F4-TCNQ) in acetone. As this method is applied to complete devices, it has a greater utility than methods involving doping of the solution prior to film deposition as it allows separation of the device processing and doping steps, facilitating the use of optimal processing conditions at each stage. It was found that by varying immersion time and the concentration of the dopant solution, it was possible to vary the threshold voltage for a P3HT OFET by over 30V. Although PTAA devices are less sensitive to oxidation by F4-TCNQ than OFETs using P3HT, they can also be controllably doped by this method up to a threshold voltage of +12 V. © 2014 AIP Publishing LLC.

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JO - Applied Physics Letters

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ER -

A simple method for controllable solution doping of complete polymer field-effect transistors

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