Abstract
A simple method of modelling the C-V profiles of high-low junctions and heterojunctions is described in which the integration of Poisson's equation proceeds from the interior towards the surface, instead of from the surface inwards as is usually the case. No iteration is necessary, so that a considerable saving in time is achieved and no stability problems arise. A typical program takes about 30 min to run on a desk-top computer.
| Original language | English |
|---|---|
| Pages (from-to) | 233-237 |
| Number of pages | 5 |
| Journal | Solid State Electronics |
| Volume | 28 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Mar 1985 |