A Single Source Precursor for Tungsten Dichalcogenide Thin Films: Mo1-xWxS2 (0 ≤ x ≤ 1) Alloys by Aerosol-Assisted Chemical Vapor Deposition (AACVD)

Aleksander Tedstone; Edward Lewis; Nicky Savjani; Xiang Li Zhong; Sarah Haigh; Paul O'Brien; David Lewis

doi:10.1021/acs.chemmater.6b05271

A Single Source Precursor for Tungsten Dichalcogenide Thin Films: Mo1-xWxS2 (0 ≤ x ≤ 1) Alloys by Aerosol-Assisted Chemical Vapor Deposition (AACVD)

Aleksander Tedstone, Edward Lewis, Nicky Savjani, Xiang Li Zhong, Sarah Haigh, Paul O'Brien, David Lewis

Research output: Contribution to journal › Article › peer-review

Abstract

The coordination complex WS₃L₂ (where L = S₂CN(CH²CH₃)₂ ) can be used to deposit tungsten disulfide (WS₂) thin films by aerosol-assisted chemical vapour deposition (AACVD). When WS₃L₂ is used in conjunction with the previ-ously reported precursor, MoL₄ which produces molybdenum disulfide (MoS₂) by AACVD, alloyed thin films of the type Mo_1-xW_xS₂ are produced. The W/Mo ratio can be controlled by chang-ing the relative concentrations of precursors in the carrier aerosol, allowing straightforward manipulation of the optical properties of the material and exquisite control of the final film composition.

Original language	English
Pages (from-to)	3858-3862
Number of pages	5
Journal	Chemistry of Materials
Volume	29
Issue number	9
Early online date	12 Apr 2017
DOIs	https://doi.org/10.1021/acs.chemmater.6b05271
Publication status	Published - 9 May 2017

Research Beacons, Institutes and Platforms

National Graphene Institute

Access to Document

10.1021/acs.chemmater.6b05271

Next Generation Multi-Dimensional X-ray Imaging
Withers, P. (PI), Burke, G. (CoI), Cernik, R. (CoI), Haigh, S. (CoI), Lee, P. (CoI) & Lionheart, W. (CoI)
1/02/15 → 31/01/20
Project: Research
Graphene-based membranes
Budd, P. (PI), Carbone, P. (CoI), Casiraghi, C. (CoI), Grieve, B. (CoI), Haigh, S. (CoI), Holmes, S. (CoI), Jivkov, A. (CoI), Kinloch, I. (CoI), Raveendran Nair, R. (CoI), Schroeder, S. (CoI), Siperstein, F. (CoI) & Vijayaraghavan, A. (CoI)
1/07/13 → 30/06/18
Project: Research

Cite this

@article{ec50666552c2425a90dbf8105398a5c1,

title = "A Single Source Precursor for Tungsten Dichalcogenide Thin Films: Mo1-xWxS2 (0 ≤ x ≤ 1) Alloys by Aerosol-Assisted Chemical Vapor Deposition (AACVD)",

abstract = "The coordination complex WS3L2 (where L = S2CN(CH2CH3)2 ) can be used to deposit tungsten disulfide (WS2) thin films by aerosol-assisted chemical vapour deposition (AACVD). When WS3L2 is used in conjunction with the previ-ously reported precursor, MoL4 which produces molybdenum disulfide (MoS2) by AACVD, alloyed thin films of the type Mo1-xWxS2 are produced. The W/Mo ratio can be controlled by chang-ing the relative concentrations of precursors in the carrier aerosol, allowing straightforward manipulation of the optical properties of the material and exquisite control of the final film composition.",

author = "Aleksander Tedstone and Edward Lewis and Nicky Savjani and Zhong, {Xiang Li} and Sarah Haigh and Paul O'Brien and David Lewis",

year = "2017",

month = may,

day = "9",

doi = "10.1021/acs.chemmater.6b05271",

language = "English",

volume = "29",

pages = "3858--3862",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "American Chemical Society",

number = "9",

}

TY - JOUR

T1 - A Single Source Precursor for Tungsten Dichalcogenide Thin Films: Mo1-xWxS2 (0 ≤ x ≤ 1) Alloys by Aerosol-Assisted Chemical Vapor Deposition (AACVD)

AU - Tedstone, Aleksander

AU - Lewis, Edward

AU - Savjani, Nicky

AU - Zhong, Xiang Li

AU - Haigh, Sarah

AU - O'Brien, Paul

AU - Lewis, David

PY - 2017/5/9

Y1 - 2017/5/9

N2 - The coordination complex WS3L2 (where L = S2CN(CH2CH3)2 ) can be used to deposit tungsten disulfide (WS2) thin films by aerosol-assisted chemical vapour deposition (AACVD). When WS3L2 is used in conjunction with the previ-ously reported precursor, MoL4 which produces molybdenum disulfide (MoS2) by AACVD, alloyed thin films of the type Mo1-xWxS2 are produced. The W/Mo ratio can be controlled by chang-ing the relative concentrations of precursors in the carrier aerosol, allowing straightforward manipulation of the optical properties of the material and exquisite control of the final film composition.

AB - The coordination complex WS3L2 (where L = S2CN(CH2CH3)2 ) can be used to deposit tungsten disulfide (WS2) thin films by aerosol-assisted chemical vapour deposition (AACVD). When WS3L2 is used in conjunction with the previ-ously reported precursor, MoL4 which produces molybdenum disulfide (MoS2) by AACVD, alloyed thin films of the type Mo1-xWxS2 are produced. The W/Mo ratio can be controlled by chang-ing the relative concentrations of precursors in the carrier aerosol, allowing straightforward manipulation of the optical properties of the material and exquisite control of the final film composition.

U2 - 10.1021/acs.chemmater.6b05271

DO - 10.1021/acs.chemmater.6b05271

M3 - Article

SN - 0897-4756

VL - 29

SP - 3858

EP - 3862

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 9

ER -

A Single Source Precursor for Tungsten Dichalcogenide Thin Films: Mo1-xWxS2 (0 ≤ x ≤ 1) Alloys by Aerosol-Assisted Chemical Vapor Deposition (AACVD)

Abstract

Research Beacons, Institutes and Platforms

Access to Document

Fingerprint

Projects

Next Generation Multi-Dimensional X-ray Imaging

Graphene-based membranes

Cite this