A two-channel model for Spin-relaxation noise

S. Omar; B. J. Van Wees; Ivan J. Vera-Marun

doi:10.1103/PhysRevB.96.235439

A two-channel model for Spin-relaxation noise

S. Omar, B. J. Van Wees, Ivan J. Vera-Marun

Research output: Contribution to journal › Article › peer-review

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Abstract

We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculate the spin signal consistent with experimental values. Using the same model we also simulate the charge and spindependent 1=f noise, both in the local and nonlocal four-probe measurement schemes, and identify the noise from the spin-relaxation resistances as the major source of spin-dependent 1=f noise

Original language	English
Article number	235469
Journal	Physical Review B
Volume	96
Early online date	26 Dec 2017
DOIs	https://doi.org/10.1103/PhysRevB.96.235439
Publication status	Published - 26 Dec 2017

Keywords

Spintronics
Graphene
electronic noise
contact polarization noise
spin relaxation noise
Two channel model

Research Beacons, Institutes and Platforms

National Graphene Institute

Access to Document

10.1103/PhysRevB.96.235439

paper_arxivAccepted author manuscript, 3.54 MB

1 Finished

CNTQC - Curved nanomembranes for Topological Quantum Computation
Vera Marun, I. (PI)
1/06/16 → 31/05/17
Project: Research

1 Article

Spin relaxation 1/f noise in graphene
Omar, S., Guimaraes, M. H. D., Kaverzin, A., Van Wees, B. J. & Vera Marun, I., 7 Feb 2017, In: Physical Review B: covering condensed matter and materials physics. 95, 8, 081403.
Research output: Contribution to journal › Article › peer-review

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Cite this

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title = "A two-channel model for Spin-relaxation noise",

abstract = "We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculate the spin signal consistent with experimental values. Using the same model we also simulate the charge and spindependent 1=f noise, both in the local and nonlocal four-probe measurement schemes, and identify the noise from the spin-relaxation resistances as the major source of spin-dependent 1=f noise",

keywords = "Spintronics, Graphene, electronic noise, contact polarization noise, spin relaxation noise, Two channel model",

author = "S. Omar and {Van Wees}, {B. J.} and Vera-Marun, {Ivan J.}",

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AU - Van Wees, B. J.

AU - Vera-Marun, Ivan J.

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N2 - We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculate the spin signal consistent with experimental values. Using the same model we also simulate the charge and spindependent 1=f noise, both in the local and nonlocal four-probe measurement schemes, and identify the noise from the spin-relaxation resistances as the major source of spin-dependent 1=f noise

AB - We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculate the spin signal consistent with experimental values. Using the same model we also simulate the charge and spindependent 1=f noise, both in the local and nonlocal four-probe measurement schemes, and identify the noise from the spin-relaxation resistances as the major source of spin-dependent 1=f noise

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KW - Graphene

KW - electronic noise

KW - contact polarization noise

KW - spin relaxation noise

KW - Two channel model

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DO - 10.1103/PhysRevB.96.235439

M3 - Article

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VL - 96

JO - Physical Review B

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ER -

A two-channel model for Spin-relaxation noise

Abstract

Keywords

Research Beacons, Institutes and Platforms

Access to Document

Fingerprint

Projects

CNTQC - Curved nanomembranes for Topological Quantum Computation

Research output

Spin relaxation 1/f noise in graphene

Cite this