A unipolar nano-diode detector with improved performance using high-k material SiNx

Linqing Zhang; Haiping Zhou; Jiawei Zhang; Qingpu Wang; Yifei  Zhang; Aimin Song

doi:10.1088/1361-6641/aae2f5

A unipolar nano-diode detector with improved performance using high-k material SiN_x

Linqing Zhang, Haiping Zhou, Jiawei Zhang, Qingpu Wang, Yifei Zhang, Aimin Song

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Abstract

The performance of a solid-state planar nano-diode, namely self-switching diode (SSD), is improved by depositing a 100-nm-thick SiN_x film with high dielectric constant (high-k) into the insulating nano-trenches. The SiN_x film grown by using plasma-enhanced chemical vapour deposition (PECVD) can enhance the electric field coupling over the trenches and thus increase the accumulated charges for field effect. In this case, the current-voltage nonlinearity is improved significantly and the responsivity of high frequency rectification is also increased by a factor of almost one order up to 100 GHz. In addition, compared to the device without SiN_x coating, the low frequency noise of the proposed diode is suppressed dramatically. The improved responsivity and noise-equivalent power (NEP) of 11 SSDs in parallel with SiN_x coating are 110 V/W at 50 GHz and 180 pW/Hz^1/2 ,which are comparable to the state-of-the-art data of reported SSD arrays.

Original language	English
Article number	114016
Journal	Semiconductor Science and Technology
Volume	33
Early online date	20 Sept 2018
DOIs	https://doi.org/10.1088/1361-6641/aae2f5
Publication status	Published - 19 Oct 2018

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Unipolar nano-diode detector with SiNxAccepted author manuscript, 867 KB

Nano-rectennas for heat-to-electricity conversion. Graphene
Song, A. (PI) & Hill, E. (CoI)
1/04/16 → 7/08/19
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Cite this

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title = "A unipolar nano-diode detector with improved performance using high-k material SiNx",

abstract = "The performance of a solid-state planar nano-diode, namely self-switching diode (SSD), is improved by depositing a 100-nm-thick SiNx film with high dielectric constant (high-k) into the insulating nano-trenches. The SiNx film grown by using plasma-enhanced chemical vapour deposition (PECVD) can enhance the electric field coupling over the trenches and thus increase the accumulated charges for field effect. In this case, the current-voltage nonlinearity is improved significantly and the responsivity of high frequency rectification is also increased by a factor of almost one order up to 100 GHz. In addition, compared to the device without SiNx coating, the low frequency noise of the proposed diode is suppressed dramatically. The improved responsivity and noise-equivalent power (NEP) of 11 SSDs in parallel with SiNx coating are 110 V/W at 50 GHz and 180 pW/Hz1/2 ,which are comparable to the state-of-the-art data of reported SSD arrays.",

author = "Linqing Zhang and Haiping Zhou and Jiawei Zhang and Qingpu Wang and Yifei Zhang and Aimin Song",

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T1 - A unipolar nano-diode detector with improved performance using high-k material SiNx

AU - Zhang, Linqing

AU - Zhou, Haiping

AU - Zhang, Jiawei

AU - Wang, Qingpu

AU - Zhang, Yifei

AU - Song, Aimin

PY - 2018/10/19

Y1 - 2018/10/19

N2 - The performance of a solid-state planar nano-diode, namely self-switching diode (SSD), is improved by depositing a 100-nm-thick SiNx film with high dielectric constant (high-k) into the insulating nano-trenches. The SiNx film grown by using plasma-enhanced chemical vapour deposition (PECVD) can enhance the electric field coupling over the trenches and thus increase the accumulated charges for field effect. In this case, the current-voltage nonlinearity is improved significantly and the responsivity of high frequency rectification is also increased by a factor of almost one order up to 100 GHz. In addition, compared to the device without SiNx coating, the low frequency noise of the proposed diode is suppressed dramatically. The improved responsivity and noise-equivalent power (NEP) of 11 SSDs in parallel with SiNx coating are 110 V/W at 50 GHz and 180 pW/Hz1/2 ,which are comparable to the state-of-the-art data of reported SSD arrays.

AB - The performance of a solid-state planar nano-diode, namely self-switching diode (SSD), is improved by depositing a 100-nm-thick SiNx film with high dielectric constant (high-k) into the insulating nano-trenches. The SiNx film grown by using plasma-enhanced chemical vapour deposition (PECVD) can enhance the electric field coupling over the trenches and thus increase the accumulated charges for field effect. In this case, the current-voltage nonlinearity is improved significantly and the responsivity of high frequency rectification is also increased by a factor of almost one order up to 100 GHz. In addition, compared to the device without SiNx coating, the low frequency noise of the proposed diode is suppressed dramatically. The improved responsivity and noise-equivalent power (NEP) of 11 SSDs in parallel with SiNx coating are 110 V/W at 50 GHz and 180 pW/Hz1/2 ,which are comparable to the state-of-the-art data of reported SSD arrays.

U2 - 10.1088/1361-6641/aae2f5

DO - 10.1088/1361-6641/aae2f5

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VL - 33

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

M1 - 114016

ER -

A unipolar nano-diode detector with improved performance using high-k material SiNx

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Nano-rectennas for heat-to-electricity conversion. Graphene

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A unipolar nano-diode detector with improved performance using high-k material SiN_x