Achieving reproducibility needed for manufacturing semiconductor tunnel devices

C. Shao; J. Sexton; M. Missous; M. J. Kelly

doi:10.1049/el.2013.0782

Achieving reproducibility needed for manufacturing semiconductor tunnel devices

C. Shao, J. Sexton, M. Missous, M. J. Kelly

Research output: Contribution to journal › Article › peer-review

Abstract

Fifty years after tunnelling through semiconductor heterojunctions was originally investigated, the present authors are the first to demonstrate the required reproducibility, in wafer, between wafers in a given growth run, and from run to run, of the electrical properties required for manufacturing a microwave and millimetre-wave detector based on electron tunnelling through a thin semiconductor tunnel barrier layer. © The Institution of Engineering and Technology 2013.

Original language	English
Pages (from-to)	669-671
Number of pages	2
Journal	Electronics Letters
Volume	49
Issue number	10
DOIs	https://doi.org/10.1049/el.2013.0782
Publication status	Published - 9 May 2013

Keywords

Millimetre waves
Reproducibilities
Run to run
Semiconductor heterojunctions
Thin semiconductor
Tunnel barrier layers
Electric properties
Heterojunctions
Manufacture
Silicon wafers
Semiconductor devices

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abstract = "Fifty years after tunnelling through semiconductor heterojunctions was originally investigated, the present authors are the first to demonstrate the required reproducibility, in wafer, between wafers in a given growth run, and from run to run, of the electrical properties required for manufacturing a microwave and millimetre-wave detector based on electron tunnelling through a thin semiconductor tunnel barrier layer. {\textcopyright} The Institution of Engineering and Technology 2013.",

keywords = "Millimetre waves, Reproducibilities, Run to run, Semiconductor heterojunctions, Thin semiconductor, Tunnel barrier layers, Electric properties, Heterojunctions, Manufacture, Silicon wafers, Semiconductor devices",

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AU - Shao, C.

AU - Sexton, J.

AU - Missous, M.

AU - Kelly, M. J.

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PY - 2013/5/9

Y1 - 2013/5/9

N2 - Fifty years after tunnelling through semiconductor heterojunctions was originally investigated, the present authors are the first to demonstrate the required reproducibility, in wafer, between wafers in a given growth run, and from run to run, of the electrical properties required for manufacturing a microwave and millimetre-wave detector based on electron tunnelling through a thin semiconductor tunnel barrier layer. © The Institution of Engineering and Technology 2013.

AB - Fifty years after tunnelling through semiconductor heterojunctions was originally investigated, the present authors are the first to demonstrate the required reproducibility, in wafer, between wafers in a given growth run, and from run to run, of the electrical properties required for manufacturing a microwave and millimetre-wave detector based on electron tunnelling through a thin semiconductor tunnel barrier layer. © The Institution of Engineering and Technology 2013.

KW - Millimetre waves

KW - Reproducibilities

KW - Run to run

KW - Semiconductor heterojunctions

KW - Thin semiconductor

KW - Tunnel barrier layers

KW - Electric properties

KW - Heterojunctions

KW - Manufacture

KW - Silicon wafers

KW - Semiconductor devices

U2 - 10.1049/el.2013.0782

DO - 10.1049/el.2013.0782

M3 - Article

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VL - 49

SP - 669

EP - 671

JO - Electronics Letters

JF - Electronics Letters

IS - 10

ER -

Achieving reproducibility needed for manufacturing semiconductor tunnel devices

Abstract

Keywords

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