Abstract
Many systems in medicine, biology, high-energy physics, and astrophysics require large area radiation sensors. In most of these applications, minimizing the amount of dead area or dead material is crucial. We have developed a new type of silicon radiation sensor in which the device is active to within a few microns of the mechanical edge. Their perimeter is made by a plasma etcher rather than a diamond saw. Their edges can be defined and also passivated by growing, in an intermediate step, a field oxide on the side surfaces. In this paper, the basic architecture and results from a synchrotron beam test are presented. © 2006.
Original language | English |
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Pages (from-to) | 272-277 |
Number of pages | 5 |
Journal | Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment |
Volume | 565 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Sept 2006 |
Keywords
- 3D
- Active edge
- Silicon radiation detectors
- Silicon radiation sensors