Active Spoof Surface Plasmon Polariton Integrated with Thin-Film Schottky Barrier Diodes at Millimeter Wave and Terahertz Frequencies

Haotian Ling; Baoqing Zhang; Pengfei Qian; Mingming Feng; Yiming Wang; Xijian Zhang; Qingpu Wang; Xudong Zou; Yifei Zhang; Aimin Song

doi:10.1109/IWS58240.2023.10222733

Active Spoof Surface Plasmon Polariton Integrated with Thin-Film Schottky Barrier Diodes at Millimeter Wave and Terahertz Frequencies

Haotian Ling^*, Baoqing Zhang, Pengfei Qian, Mingming Feng, Yiming Wang, Xijian Zhang, Qingpu Wang, Xudong Zou, Yifei Zhang, Aimin Song

^*Corresponding author for this work

EEE - Academic & Research

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, metal-oxide thin-film Schottky barrier diodes (SBDs) are proposed to dynamically manipulate spoof surface plasmon polaritons (SSPPs) at millimeter wave (MMW) and terahertz (THz) frequencies. Bridging the gaps of split ring resonators (SRRs) and electric-field-coupled inductor-capacitor resonators (ELCRs) with planar thin-film SBD structure can actively change the thin-film carrier density within the gaps via forward bias, which manipulates the resonant amplitude of SSPPs at central frequencies consequently. As a demonstration, single-frequency and dual-frequency active SSPP devices with SRRs were fabricated and tested, showing an excellent amplitude modulation and dual-frequency multi-bit modulation capability at MMW frequencies, respectively. Furthermore, the planar thin-film SBD structure was integrated in an ELCR array to verify the feasibility of the proposed modulation method at 0.39 THz. This method greatly promotes the working frequency of the metal-oxide thin-film SBDs, and pave a new way for program-mable SSPPs at MMW and THz frequencies.

Original language	English
Title of host publication	2023 IEEE MTT-S International Wireless Symposium, IWS 2023 - Proceedings
Publisher	IEEE
Pages	1-3
Number of pages	3
ISBN (Electronic)	9798350336535
ISBN (Print)	9798350336542
DOIs	https://doi.org/10.1109/IWS58240.2023.10222733
Publication status	Published - 29 Aug 2023
Event	2023 IEEE MTT-S International Wireless Symposium, IWS 2023 - Qingdao, China Duration: 14 May 2023 → 17 May 2023

Conference

Conference	2023 IEEE MTT-S International Wireless Symposium, IWS 2023
Country/Territory	China
City	Qingdao
Period	14/05/23 → 17/05/23

Keywords

active modulation
millimeter wave and terahertz frequencies
Schottky barrier diodes
spoof surface plasma polaritons
thin-film

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10.1109/IWS58240.2023.10222733

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Ling, H., Zhang, B., Qian, P., Feng, M., Wang, Y., Zhang, X., Wang, Q., Zou, X., Zhang, Y., & Song, A. (2023). Active Spoof Surface Plasmon Polariton Integrated with Thin-Film Schottky Barrier Diodes at Millimeter Wave and Terahertz Frequencies. In 2023 IEEE MTT-S International Wireless Symposium, IWS 2023 - Proceedings (pp. 1-3). IEEE. https://doi.org/10.1109/IWS58240.2023.10222733

@inproceedings{3c0e711671d843b9abac389d81ca7220,

title = "Active Spoof Surface Plasmon Polariton Integrated with Thin-Film Schottky Barrier Diodes at Millimeter Wave and Terahertz Frequencies",

abstract = "In this paper, metal-oxide thin-film Schottky barrier diodes (SBDs) are proposed to dynamically manipulate spoof surface plasmon polaritons (SSPPs) at millimeter wave (MMW) and terahertz (THz) frequencies. Bridging the gaps of split ring resonators (SRRs) and electric-field-coupled inductor-capacitor resonators (ELCRs) with planar thin-film SBD structure can actively change the thin-film carrier density within the gaps via forward bias, which manipulates the resonant amplitude of SSPPs at central frequencies consequently. As a demonstration, single-frequency and dual-frequency active SSPP devices with SRRs were fabricated and tested, showing an excellent amplitude modulation and dual-frequency multi-bit modulation capability at MMW frequencies, respectively. Furthermore, the planar thin-film SBD structure was integrated in an ELCR array to verify the feasibility of the proposed modulation method at 0.39 THz. This method greatly promotes the working frequency of the metal-oxide thin-film SBDs, and pave a new way for program-mable SSPPs at MMW and THz frequencies.",

keywords = "active modulation, millimeter wave and terahertz frequencies, Schottky barrier diodes, spoof surface plasma polaritons, thin-film",

author = "Haotian Ling and Baoqing Zhang and Pengfei Qian and Mingming Feng and Yiming Wang and Xijian Zhang and Qingpu Wang and Xudong Zou and Yifei Zhang and Aimin Song",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE MTT-S International Wireless Symposium, IWS 2023 ; Conference date: 14-05-2023 Through 17-05-2023",

year = "2023",

month = aug,

day = "29",

doi = "10.1109/IWS58240.2023.10222733",

language = "English",

isbn = "9798350336542",

pages = "1--3",

booktitle = "2023 IEEE MTT-S International Wireless Symposium, IWS 2023 - Proceedings",

publisher = "IEEE",

address = "United States",

}

Ling, H, Zhang, B, Qian, P, Feng, M, Wang, Y, Zhang, X, Wang, Q, Zou, X, Zhang, Y & Song, A 2023, Active Spoof Surface Plasmon Polariton Integrated with Thin-Film Schottky Barrier Diodes at Millimeter Wave and Terahertz Frequencies. in 2023 IEEE MTT-S International Wireless Symposium, IWS 2023 - Proceedings. IEEE, pp. 1-3, 2023 IEEE MTT-S International Wireless Symposium, IWS 2023, Qingdao, China, 14/05/23. https://doi.org/10.1109/IWS58240.2023.10222733

Active Spoof Surface Plasmon Polariton Integrated with Thin-Film Schottky Barrier Diodes at Millimeter Wave and Terahertz Frequencies. / Ling, Haotian; Zhang, Baoqing; Qian, Pengfei et al.
2023 IEEE MTT-S International Wireless Symposium, IWS 2023 - Proceedings. IEEE, 2023. p. 1-3.

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Active Spoof Surface Plasmon Polariton Integrated with Thin-Film Schottky Barrier Diodes at Millimeter Wave and Terahertz Frequencies

AU - Ling, Haotian

AU - Zhang, Baoqing

AU - Qian, Pengfei

AU - Feng, Mingming

AU - Wang, Yiming

AU - Zhang, Xijian

AU - Wang, Qingpu

AU - Zou, Xudong

AU - Zhang, Yifei

AU - Song, Aimin

PY - 2023/8/29

Y1 - 2023/8/29

N2 - In this paper, metal-oxide thin-film Schottky barrier diodes (SBDs) are proposed to dynamically manipulate spoof surface plasmon polaritons (SSPPs) at millimeter wave (MMW) and terahertz (THz) frequencies. Bridging the gaps of split ring resonators (SRRs) and electric-field-coupled inductor-capacitor resonators (ELCRs) with planar thin-film SBD structure can actively change the thin-film carrier density within the gaps via forward bias, which manipulates the resonant amplitude of SSPPs at central frequencies consequently. As a demonstration, single-frequency and dual-frequency active SSPP devices with SRRs were fabricated and tested, showing an excellent amplitude modulation and dual-frequency multi-bit modulation capability at MMW frequencies, respectively. Furthermore, the planar thin-film SBD structure was integrated in an ELCR array to verify the feasibility of the proposed modulation method at 0.39 THz. This method greatly promotes the working frequency of the metal-oxide thin-film SBDs, and pave a new way for program-mable SSPPs at MMW and THz frequencies.

AB - In this paper, metal-oxide thin-film Schottky barrier diodes (SBDs) are proposed to dynamically manipulate spoof surface plasmon polaritons (SSPPs) at millimeter wave (MMW) and terahertz (THz) frequencies. Bridging the gaps of split ring resonators (SRRs) and electric-field-coupled inductor-capacitor resonators (ELCRs) with planar thin-film SBD structure can actively change the thin-film carrier density within the gaps via forward bias, which manipulates the resonant amplitude of SSPPs at central frequencies consequently. As a demonstration, single-frequency and dual-frequency active SSPP devices with SRRs were fabricated and tested, showing an excellent amplitude modulation and dual-frequency multi-bit modulation capability at MMW frequencies, respectively. Furthermore, the planar thin-film SBD structure was integrated in an ELCR array to verify the feasibility of the proposed modulation method at 0.39 THz. This method greatly promotes the working frequency of the metal-oxide thin-film SBDs, and pave a new way for program-mable SSPPs at MMW and THz frequencies.

KW - active modulation

KW - millimeter wave and terahertz frequencies

KW - Schottky barrier diodes

KW - spoof surface plasma polaritons

KW - thin-film

UR - http://www.scopus.com/inward/record.url?scp=85171464100&partnerID=8YFLogxK

U2 - 10.1109/IWS58240.2023.10222733

DO - 10.1109/IWS58240.2023.10222733

M3 - Conference contribution

AN - SCOPUS:85171464100

SN - 9798350336542

SP - 1

EP - 3

BT - 2023 IEEE MTT-S International Wireless Symposium, IWS 2023 - Proceedings

PB - IEEE

T2 - 2023 IEEE MTT-S International Wireless Symposium, IWS 2023

Y2 - 14 May 2023 through 17 May 2023

ER -

Active Spoof Surface Plasmon Polariton Integrated with Thin-Film Schottky Barrier Diodes at Millimeter Wave and Terahertz Frequencies

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Keywords

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