AlGaN/GaN microwave HFET including a thin AlN carrier exclusion layer

R. S. Balmer, K. P. Hilton, K. J. Nash, M. J. Uren, D. J. Wallis, A. Wells, M. Missous, T. Martin

Research output: Contribution to journalConference articlepeer-review


A study of the effect of the insertion of a thin AlN exclusion layer between the AlGaN and GaN buffer layer in microwave hetero-junction field effect transistor structures grown by MOVPE on sapphire and SI-SiC substrates is presented. A dramatic improvement in carrier drift mobility is observed and we present evidence from CV analysis that this improvement is associated with reduced penetration of the 2D electron gas into the AlGaN.

Original languageEnglish
Pages (from-to)2331-2334
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
Publication statusPublished - 1 Dec 2003
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 25 May 200330 May 2003


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