All organic permanent memory transistor using an amorphous, spin-cast ferroelectric-like gate insulator

Raoul Schroeder, Leszek Majewski, Martin Grell

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We present an all-organic permanent memory transistor using an amorphous spin-cast gate insulator. This gate insulator exhibits a remanent polarisation in its amorphous state, a unique property, which is best described as “ferroelectric-like”. The memory transistor thus built perform extremely well, even when compared to inorganic ferroelectric memory transitors; the memory “on” to memory “off” current ratio is close to 3x10+4, while time-dependent studies show retention times of 14 hours and more.
    Original languageEnglish
    Pages (from-to)633-636
    Number of pages4
    JournalAdvanced Materials
    Volume16
    Issue number7
    Publication statusPublished - 20 Jan 2004

    Keywords

    • Organic field-effect transistor (OFET)
    • Memory device
    • Amorphous polymer dielectric

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