All-organic single-transistor permanent memory device

Raoul Schroeder; Leszek Majewski; Monika Voigt; Martin Grell

All-organic single-transistor permanent memory device

Raoul Schroeder, Leszek Majewski, Monika Voigt, Martin Grell

The University of Sheffield

Research output: Contribution to journal › Article › peer-review

Abstract

We present an all-organic permanent memory transistor using an amorphous spin-cast gate insulator. This gate insulator exhibits a remanent polarisation in its amorphous state, a unique property, which is best described as “ferroelectric-like”. The memory transistor thus built perform extremely well, even when compared to inorganic ferroelectric memory transistors; the memory “on” to memory “off” current ratio is close to 3x10(+4), while time-dependent studies show retention times of 14 hours and more.

Original language	English
Article number	D6.19.1
Journal	Materials Research Society Symposium Proceedings
Volume	830
Publication status	Published - 1 Jan 2005

Keywords

Organic field-effect transistor (OFET)
Memory device

Cite this

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title = "All-organic single-transistor permanent memory device",

abstract = "We present an all-organic permanent memory transistor using an amorphous spin-cast gate insulator. This gate insulator exhibits a remanent polarisation in its amorphous state, a unique property, which is best described as “ferroelectric-like”. The memory transistor thus built perform extremely well, even when compared to inorganic ferroelectric memory transistors; the memory “on” to memory “off” current ratio is close to 3x10(+4), while time-dependent studies show retention times of 14 hours and more.",

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AU - Schroeder, Raoul

AU - Majewski, Leszek

AU - Voigt, Monika

AU - Grell, Martin

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N2 - We present an all-organic permanent memory transistor using an amorphous spin-cast gate insulator. This gate insulator exhibits a remanent polarisation in its amorphous state, a unique property, which is best described as “ferroelectric-like”. The memory transistor thus built perform extremely well, even when compared to inorganic ferroelectric memory transistors; the memory “on” to memory “off” current ratio is close to 3x10(+4), while time-dependent studies show retention times of 14 hours and more.

AB - We present an all-organic permanent memory transistor using an amorphous spin-cast gate insulator. This gate insulator exhibits a remanent polarisation in its amorphous state, a unique property, which is best described as “ferroelectric-like”. The memory transistor thus built perform extremely well, even when compared to inorganic ferroelectric memory transistors; the memory “on” to memory “off” current ratio is close to 3x10(+4), while time-dependent studies show retention times of 14 hours and more.

KW - Organic field-effect transistor (OFET)

KW - Memory device

M3 - Article

SN - 0272-9172

VL - 830

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

M1 - D6.19.1

ER -

All-organic single-transistor permanent memory device

Abstract

Keywords

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