All-oxide-semiconductor-based Thin-film Complementary Static Random Access Memory

Yang Jin; Yuzhuo  Yuan; Yunpeng Li; Lulu Du; Yiming  Wang; Zhenjia  Hu; Qingpu Wang; Li Zhou; Qian Xin; Aimin Song

doi:10.1109/LED.2018.2877589

All-oxide-semiconductor-based Thin-film Complementary Static Random Access Memory

Yang Jin, Yuzhuo Yuan, Yunpeng Li, Lulu Du, Yiming Wang, Zhenjia Hu, Qingpu Wang, Li Zhou, Qian Xin, Aimin Song

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Original language	English
Pages (from-to)	1876-1879
Journal	IEEE Electron Device Letters
Volume	39
Issue number	12
Early online date	23 Oct 2018
DOIs	https://doi.org/10.1109/LED.2018.2877589
Publication status	Published - 25 Nov 2018

Keywords

Static random access memory (SRAM)
Complementary inverter
Indium gallium zinc oxide (InGaZnO or IGZO)
tin monoxide (SnO)
Thin-film transistor (TFT)

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10.1109/LED.2018.2877589

All-oxide-semiconductor-based Thin-film Complementary Static Random Access MemoryAccepted author manuscript, 378 KB

Nano-rectennas for heat-to-electricity conversion. Graphene
Song, A. (PI) & Hill, E. (CoI)
1/04/16 → 7/08/19
Project: Research

Cite this

@article{3c7cc18dd64a4c388b5edb9f51a2f837,

title = "All-oxide-semiconductor-based Thin-film Complementary Static Random Access Memory",

keywords = "Static random access memory (SRAM), Complementary inverter, Indium gallium zinc oxide (InGaZnO or IGZO), tin monoxide (SnO), Thin-film transistor (TFT)",

author = "Yang Jin and Yuzhuo Yuan and {Yunpeng Li} and Lulu Du and Yiming Wang and Zhenjia Hu and {Qingpu Wang} and Li Zhou and {Qian Xin} and Aimin Song",

year = "2018",

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day = "25",

doi = "10.1109/LED.2018.2877589",

language = "English",

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journal = "IEEE Electron Device Letters",

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T1 - All-oxide-semiconductor-based Thin-film Complementary Static Random Access Memory

AU - Jin, Yang

AU - Yuan, Yuzhuo

AU - Yunpeng Li,

AU - Du, Lulu

AU - Wang, Yiming

AU - Hu, Zhenjia

AU - Qingpu Wang,

AU - Zhou, Li

AU - Qian Xin,

AU - Song, Aimin

PY - 2018/11/25

Y1 - 2018/11/25

KW - Static random access memory (SRAM)

KW - Complementary inverter

KW - Indium gallium zinc oxide (InGaZnO or IGZO)

KW - tin monoxide (SnO)

KW - Thin-film transistor (TFT)

U2 - 10.1109/LED.2018.2877589

DO - 10.1109/LED.2018.2877589

M3 - Article

SN - 0741-3106

VL - 39

SP - 1876

EP - 1879

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

ER -

All-oxide-semiconductor-based Thin-film Complementary Static Random Access Memory

Keywords

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Projects

Nano-rectennas for heat-to-electricity conversion. Graphene

Cite this