Ambipolar SnOx Thin-Film Transistors Achieved at High Sputtering Power

Yunpeng Li; Jia Yang; Yunxiu  Qu; Jiawei Zhang; Li Zhou; Zaixing  Yang; Zhaojun Lin; Qingpu Wang; Aimin Song; Qian Xin

doi:10.1063/1.5022875

Ambipolar SnOx Thin-Film Transistors Achieved at High Sputtering Power

Yunpeng Li, Jia Yang, Yunxiu Qu, Jiawei Zhang, Li Zhou, Zaixing Yang, Zhaojun Lin, Qingpu Wang, Aimin Song, Qian Xin

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Abstract

SnO is the only oxide semiconductor to date that has exhibited ambipolar behavior in thin-film transistors (TFTs). In this work, ambipolar behavior was observed in SnOx TFTs fabricated at a high sputtering power of 200 W and post-annealed at 150-250 oC in ambient air. X-raydiffraction
patterns show polycrystallisation of SnO and Sn in the annealed SnOx films.
Scanning-electron-microscopy images revealed that microgrooves occurred after the films were annealed. Clusters subsequently segregated along the microgrooves, and our experiments suggested that they are most likely Sn clusters. Atomic-force-microscopy images indicated an
abrupt increase in film roughness due to the cluster segregations. An important implication of this work is that excess Sn in the film, which has been generally thought to be detrimental to the film quality, may promote the ambipolar conduction when it is segregated from the film to
enhance the stoichiometric balance.

Original language	English
Article number	182102
Journal	Applied Physics Letters
Volume	112
Early online date	2 May 2018
DOIs	https://doi.org/10.1063/1.5022875
Publication status	Published - 2018

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@article{1c6b86478ae84641837de341b37be56d,

title = "Ambipolar SnOx Thin-Film Transistors Achieved at High Sputtering Power",

abstract = "SnO is the only oxide semiconductor to date that has exhibited ambipolar behavior in thin-film transistors (TFTs). In this work, ambipolar behavior was observed in SnOx TFTs fabricated at a high sputtering power of 200 W and post-annealed at 150-250 oC in ambient air. X-raydiffractionpatterns show polycrystallisation of SnO and Sn in the annealed SnOx films.Scanning-electron-microscopy images revealed that microgrooves occurred after the films were annealed. Clusters subsequently segregated along the microgrooves, and our experiments suggested that they are most likely Sn clusters. Atomic-force-microscopy images indicated anabrupt increase in film roughness due to the cluster segregations. An important implication of this work is that excess Sn in the film, which has been generally thought to be detrimental to the film quality, may promote the ambipolar conduction when it is segregated from the film toenhance the stoichiometric balance.",

author = "{Yunpeng Li} and {Jia Yang} and Yunxiu Qu and Jiawei Zhang and Li Zhou and Zaixing Yang and Zhaojun Lin and {Qingpu Wang} and Aimin Song and {Qian Xin}",

year = "2018",

doi = "10.1063/1.5022875",

language = "English",

volume = "112",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Ambipolar SnOx Thin-Film Transistors Achieved at High Sputtering Power

AU - Yunpeng Li,

AU - Jia Yang,

AU - Qu, Yunxiu

AU - Zhang, Jiawei

AU - Zhou, Li

AU - Yang, Zaixing

AU - Lin, Zhaojun

AU - Qingpu Wang,

AU - Song, Aimin

AU - Qian Xin,

PY - 2018

Y1 - 2018

N2 - SnO is the only oxide semiconductor to date that has exhibited ambipolar behavior in thin-film transistors (TFTs). In this work, ambipolar behavior was observed in SnOx TFTs fabricated at a high sputtering power of 200 W and post-annealed at 150-250 oC in ambient air. X-raydiffractionpatterns show polycrystallisation of SnO and Sn in the annealed SnOx films.Scanning-electron-microscopy images revealed that microgrooves occurred after the films were annealed. Clusters subsequently segregated along the microgrooves, and our experiments suggested that they are most likely Sn clusters. Atomic-force-microscopy images indicated anabrupt increase in film roughness due to the cluster segregations. An important implication of this work is that excess Sn in the film, which has been generally thought to be detrimental to the film quality, may promote the ambipolar conduction when it is segregated from the film toenhance the stoichiometric balance.

AB - SnO is the only oxide semiconductor to date that has exhibited ambipolar behavior in thin-film transistors (TFTs). In this work, ambipolar behavior was observed in SnOx TFTs fabricated at a high sputtering power of 200 W and post-annealed at 150-250 oC in ambient air. X-raydiffractionpatterns show polycrystallisation of SnO and Sn in the annealed SnOx films.Scanning-electron-microscopy images revealed that microgrooves occurred after the films were annealed. Clusters subsequently segregated along the microgrooves, and our experiments suggested that they are most likely Sn clusters. Atomic-force-microscopy images indicated anabrupt increase in film roughness due to the cluster segregations. An important implication of this work is that excess Sn in the film, which has been generally thought to be detrimental to the film quality, may promote the ambipolar conduction when it is segregated from the film toenhance the stoichiometric balance.

U2 - 10.1063/1.5022875

DO - 10.1063/1.5022875

M3 - Article

SN - 0003-6951

VL - 112

JO - Applied Physics Letters

JF - Applied Physics Letters

M1 - 182102

ER -

Ambipolar SnOx Thin-Film Transistors Achieved at High Sputtering Power

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