Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions

Yiming Wang, Hanbin Wang, Jiawei Zhang, He Li, Gengchang Zhu, Yanpeng Shi, Yuxiang Li, Qingpu Wang, Qian Xin, Zhongchao Fan, Fuhua Yang, Aimin Song

    Research output: Contribution to journalArticlepeer-review

    631 Downloads (Pure)
    Original languageEnglish
    Pages (from-to)1377 - 1382
    JournalIEEE Transactions on Electron Devices
    Volume65
    Issue number4
    DOIs
    Publication statusPublished - 5 Mar 2018

    Keywords

    • thin-film
    • transistor
    • a-InGaZnO
    • high frequency
    • current gain

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