Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions

Yiming  Wang; Hanbin Wang; Jiawei Zhang; He Li; Gengchang  Zhu; Yanpeng  Shi; Yuxiang Li; Qingpu Wang; Qian Xin; Zhongchao  Fan; Fuhua Yang; Aimin Song

doi:10.1109/TED.2018.2807621

Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions

Yiming Wang, Hanbin Wang, Jiawei Zhang, He Li, Gengchang Zhu, Yanpeng Shi, Yuxiang Li, Qingpu Wang, Qian Xin, Zhongchao Fan, Fuhua Yang, Aimin Song

Research output: Contribution to journal › Article › peer-review

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Original language	English
Pages (from-to)	1377 - 1382
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	4
DOIs	https://doi.org/10.1109/TED.2018.2807621
Publication status	Published - 5 Mar 2018

Keywords

thin-film
transistor
a-InGaZnO
high frequency
current gain

Access to Document

10.1109/TED.2018.2807621

Marked revised manuscript - Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz_manuscript_171211_revision manuscript ver 3Accepted author manuscript, 1.43 MB

Cite this

@article{216363bf91fe4c278acde1eac6e158c1,

title = "Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions",

keywords = "thin-film , transistor , a-InGaZnO, high frequency, current gain",

author = "Yiming Wang and Hanbin Wang and Jiawei Zhang and He Li and Gengchang Zhu and Yanpeng Shi and Yuxiang Li and {Qingpu Wang} and {Qian Xin} and Zhongchao Fan and Fuhua Yang and Aimin Song",

year = "2018",

month = mar,

day = "5",

doi = "10.1109/TED.2018.2807621",

language = "English",

volume = "65",

pages = "1377 -- 1382",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "4",

}

TY - JOUR

T1 - Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions

AU - Wang, Yiming

AU - Wang, Hanbin

AU - Zhang, Jiawei

AU - Li, He

AU - Zhu, Gengchang

AU - Shi, Yanpeng

AU - Li, Yuxiang

AU - Qingpu Wang,

AU - Qian Xin,

AU - Fan, Zhongchao

AU - Yang, Fuhua

AU - Song, Aimin

PY - 2018/3/5

Y1 - 2018/3/5

KW - thin-film

KW - transistor

KW - a-InGaZnO

KW - high frequency

KW - current gain

U2 - 10.1109/TED.2018.2807621

DO - 10.1109/TED.2018.2807621

M3 - Article

SN - 0018-9383

VL - 65

SP - 1377

EP - 1382

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -