An electrical and optical study of electrons in triple barrier structures

C. Y. Kuo; M. A. Lynch; A. H. Roberts; P. D. Buckle; P. Dawson; M. Missous; W. S. Truscott

doi:10.1016/S1386-9477(98)00166-0

An electrical and optical study of electrons in triple barrier structures

C. Y. Kuo, M. A. Lynch, A. H. Roberts, P. D. Buckle, P. Dawson, M. Missous, W. S. Truscott^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Current-voltage curves measured over the temperature range 13-300 K show three shoulders and/or peaks common to most of a series of MBE-grown GaAs/Al_xGa_{1 - x}As triple-barrier resonant tunnelling structures. The widths of the barriers (x = ∼ 0.33) were ∼ 49, ∼ 58 and ∼ 49 Å; one well width was fixed between 72 and 68 Å and the other varied between 68 and 45 Å. Photoluminescence (PL) and PL excitation spectroscopy and a self-consistent Poisson-Schrödinger model suggest that the features are associated with (i) the maximum in the transparency of the barrier region when the two electron levels in the wells are aligned, (ii) a cut-off in phonon emission assisted tunnelling between the wells when the separation of these levels exceeds the optical phonon energy of 36 meV, and (iii) cut-off of coupling between electrons in the negative contact and the states in the adjacent well.

Original language	English
Pages (from-to)	815-819
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	2
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(98)00166-0
Publication status	Published - 15 Jul 1998

Keywords

Photoluminescence
Resonant tunnelling
Self-consistent modelling
Triple barriers

Research Beacons, Institutes and Platforms

Photon Science Institute

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10.1016/S1386-9477(98)00166-0

Cite this

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title = "An electrical and optical study of electrons in triple barrier structures",

abstract = "Current-voltage curves measured over the temperature range 13-300 K show three shoulders and/or peaks common to most of a series of MBE-grown GaAs/AlxGa1 - xAs triple-barrier resonant tunnelling structures. The widths of the barriers (x = ∼ 0.33) were ∼ 49, ∼ 58 and ∼ 49 {\AA}; one well width was fixed between 72 and 68 {\AA} and the other varied between 68 and 45 {\AA}. Photoluminescence (PL) and PL excitation spectroscopy and a self-consistent Poisson-Schr{\"o}dinger model suggest that the features are associated with (i) the maximum in the transparency of the barrier region when the two electron levels in the wells are aligned, (ii) a cut-off in phonon emission assisted tunnelling between the wells when the separation of these levels exceeds the optical phonon energy of 36 meV, and (iii) cut-off of coupling between electrons in the negative contact and the states in the adjacent well.",

keywords = "Photoluminescence, Resonant tunnelling, Self-consistent modelling, Triple barriers",

author = "Kuo, {C. Y.} and Lynch, {M. A.} and Roberts, {A. H.} and Buckle, {P. D.} and P. Dawson and M. Missous and Truscott, {W. S.}",

year = "1998",

month = jul,

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doi = "10.1016/S1386-9477(98)00166-0",

language = "English",

volume = "2",

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T1 - An electrical and optical study of electrons in triple barrier structures

AU - Kuo, C. Y.

AU - Lynch, M. A.

AU - Roberts, A. H.

AU - Buckle, P. D.

AU - Dawson, P.

AU - Missous, M.

AU - Truscott, W. S.

PY - 1998/7/15

Y1 - 1998/7/15

N2 - Current-voltage curves measured over the temperature range 13-300 K show three shoulders and/or peaks common to most of a series of MBE-grown GaAs/AlxGa1 - xAs triple-barrier resonant tunnelling structures. The widths of the barriers (x = ∼ 0.33) were ∼ 49, ∼ 58 and ∼ 49 Å; one well width was fixed between 72 and 68 Å and the other varied between 68 and 45 Å. Photoluminescence (PL) and PL excitation spectroscopy and a self-consistent Poisson-Schrödinger model suggest that the features are associated with (i) the maximum in the transparency of the barrier region when the two electron levels in the wells are aligned, (ii) a cut-off in phonon emission assisted tunnelling between the wells when the separation of these levels exceeds the optical phonon energy of 36 meV, and (iii) cut-off of coupling between electrons in the negative contact and the states in the adjacent well.

AB - Current-voltage curves measured over the temperature range 13-300 K show three shoulders and/or peaks common to most of a series of MBE-grown GaAs/AlxGa1 - xAs triple-barrier resonant tunnelling structures. The widths of the barriers (x = ∼ 0.33) were ∼ 49, ∼ 58 and ∼ 49 Å; one well width was fixed between 72 and 68 Å and the other varied between 68 and 45 Å. Photoluminescence (PL) and PL excitation spectroscopy and a self-consistent Poisson-Schrödinger model suggest that the features are associated with (i) the maximum in the transparency of the barrier region when the two electron levels in the wells are aligned, (ii) a cut-off in phonon emission assisted tunnelling between the wells when the separation of these levels exceeds the optical phonon energy of 36 meV, and (iii) cut-off of coupling between electrons in the negative contact and the states in the adjacent well.

KW - Photoluminescence

KW - Resonant tunnelling

KW - Self-consistent modelling

KW - Triple barriers

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JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

ER -

An electrical and optical study of electrons in triple barrier structures

Abstract

Keywords

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